Embedded Gate Driver Circuit With Self-Aligned InGaZnO TFTs Using Common Bootstrapped Capacitive Driving for High-Resolution WOLED Displays

Kyung Min Kim,Seok Noh,Sujin Jung,Inhyo Han,Joon-Young Yang,Yong Min Ha,Soo Young Yoon,Hyun Jae Kim

DOI: https://doi.org/10.1109/ted.2024.3396777

IF: 3.1

2024-05-25

IEEE Transactions on Electron Devices

Abstract:We propose an advanced gate driver circuit with self-aligned InGaZnO (IGZO) thin-film transistors (TFTs) using common bootstrapped capacitive driving for multiple gate outputs. The proposed circuit represents a compact circuit area design and consistent falling time ( applicable to high-resolution white organic light-emitting diode (WOLED) displays. The four outputs of the unit stage exhibited uniform in simulation and characterization ( s). This could be attributed to the calibrated discharging ability of pull-up transistors (T6s) having the same gate nodes, mainly resulted from the maintained gate-to-source voltage in T6s. We demonstrate a 13.3-inch-diagonal-size (166 pixels per inch) WOLED display using the proposed circuit, with uniform luminance and excellent circuit reliability.

engineering, electrical & electronic,physics, applied