Abstract:Abstract— An indium gallium zinc oxide (IGZO) film with an amorphous phase was deposited and had a very flat morphology with a RMS value of 0.35 nm. IGZO TFTs were fabricated on a glass substrate by conventional photolithography and wet‐etching processes. IGZO TFTs demonstrated a high mobility of 124 cm2/V‐sec, a high on/off ratio of over 108, a desirable threshold voltage of 0.7 V, and a sub‐threshold swing of 0.43 V/decade. High mobility partially resulted from the fringing‐electric‐field effect that leads to an additional current flow beyond the device edges. Therefore, considering our device geometry, the actual mobility was about 100 cm2/V‐sec, and had a very low dependence on the variation of W/L (channel width and length) and thickness of the active layer. IGZO TFTs were also fabricated on a flexible metal substrate for a conformable display application. TFT devices showed an actual mobility of 72 cm2/V‐sec, a high on/off ratio of ∼107, and a sub‐threshold swing of 0.36 V/decade. There was no significant difference before, during, or after bending. Moreover, an IGZO TFT array was fabricated and a top‐emitting OLED device was successfully driven by it. Therefore, the oxide TFT could be a promising candidate as a backplane for OLED devices.

P‐17: IGZO TFT Gate Driver with Independent both Bootstrapping and Control Units for AMOLED Mobile Display

P‐12: A Robust A‐igzo TFT Integrated Scan/Emission Driver with Dynamic Inverter for AMOLED Display

P‐15: Student Poster: Reliable Gate Driver for Real‐Time External Compensated AMOLED Display Using InGaZnO TFTs

P-48: Integrated a-IGZO TFT Gate Driver with Programmable Output for AMOLED Display

Dual-bootstrapping Gate Driver Circuit Design Using IGZO TFTs

P-5.2: A gate driver circuit with a-IGZO TFTs for a 15-inch AMOLED display

A Low Power TG A-Igzo TFT Gate Driver Circuit for AMOLED Display

12.5: A Depletion‐mode Compatible Gate Driver on Array for a‐IGZO TFT‐OLED Displays

Embedded Gate Driver Circuit With Self-Aligned InGaZnO TFTs Using Common Bootstrapped Capacitive Driving for High-Resolution WOLED Displays

P‐8: A Depletion‐Mode Compatible Gate Driver on Array for a‐IGZO TFT‐OLED Displays

A High-Reliability Gate Driver Integrated in Flexible AMOLED Display by IZO TFTs

Dual-Gate A-Igzo TFTs for Gate Driver Application

Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays

Gate Driver on Array With Multiple Outputs and Variable Pulse Widths for Low-Temperature Polysilicon and Oxide (LTPO) TFTs Driven AMOLED Displays

P‐12: A‐Si:H TFT Gate Driver with Shared Dual Pull‐Down Units for Large‐Sized TFT‐LCD Applications

31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors

A Compact Integrated Hydrogenated Amorphous Silicon Gate Driver For Tft-Lcd

P-28: Robust Gate Driver Design with Etching-Stop-Layer Type InGaZnO TFTs Using Stack Buffer Structure

P‐1.14: an A‐igzo TFT AMOLED Pixel Circuit with Source Follower Structure to Alleviate Hysteresis Effect

Oxide TFT with multilayer gate insulator for backplane of AMOLED device