Abstract:Two-dimensional layered transition-metal dichalcogenides (TMDs) have attracted intense interest for their layer number-dependent electronic properties and have exciting potential for atomically thin electronics and optoelectronics. The studies to date have primarily been limited to exfoliated materials with limited control of the size, layer number, and yield. Despite considerable efforts to date, it remains a significant challenge to produce large-sized TMD single crystals with precise control of the layer number. Here, we report the robust growth of high-quality WSe2 single-crystal domains with a selectively controlled thickness in a reverse-flow chemical vapor deposition system with a solid precursor. By introducing a pre-annealing step to tune elemental distribution and volatilization rate of the solid precursor, we stabilize the vapor supply to achieve a highly uniform nucleation and growth, and thus ensure the precise control of the layer number for the highly selective growth of monolayer or bilayer WSe2 single crystals (>500 μm). The transmission electron microscopy and optical characterizations of the resulting WSe2 single crystals exhibit excellent crystalline quality with systematically tunable optical properties. Electrical transport studies further show that the WSe2 field-effect transistors exhibit p-type semiconductor characteristics with effective hole carrier mobility up to 92 cm2 V–1 s–1 in monolayer and 145 cm2 V–1 s–1 in bilayer materials at room temperature. This simple approach opens up a new avenue for the highly controlled synthesis of WSe2 atomic layers for both fundamental studies and technological applications.

Controlled Synthesis of Zrs2 Mono Layer and Few Layers on Hexagonal Boron Nitride

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (adv. Mater. 10/2014)

Gas-phase alkali halide assisted stable precursor supply from zirconium carbide for the synthesis of 2D large-sized ZrS2 nanosheets

Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors.

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Low-Temperature Synthesis of Boron Nitride As a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices.

Unveiling the structural origin of the high carrier mobility of a molecular monolayer on boron nitride

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Monolayer Behavior of NbS2 in Natural Van Der Waals Heterostructures.

Thickness-Controlled Synthesis of Uniform Hexagonal Boron Nitride Films on Metal Alloys by Chemical Vapor Deposition

Formation of a monolayer h -BN nanomesh on Rh (111) studied using in-situ STM

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor