Abstract:Low-dimensional electronic materials such as carbon nanotubes, graphene, and transition-metal chalcogenides have drawn a lot of interest from the aspects of both fundamental studies and practical applications. Their atomic-scale thickness and unique electrical properties make them become promising candidates as the drop-in replacement of conventional bulk electronic materials in future electronic devices to enable better performance and enhanced functionality. Research on low-dimensional electronic materials so far has predominantly focused on crystalline semimetals and semiconductors. However, advanced electronic devices also require suitable low-dimensional insulators, which are ideally in the highly disordered amorphous form, similar as SiO 2 for silicon, to avoid the nonuniformity and defects related with grain boundaries, in order to fulfill their potentials. Here we present a new strategy for the solution-based preparation of atomically thin amorphous carbon as a novel 2D insulator. Our unique process can precisely control the film thickness at atomic level and has excellent scalability toward wafer-scale deposition. The obtained 2D amorphous carbon monolayer exhibits mechanical robustness comparable to graphene and can be suspended as a free-standing membrane on transmission-electron-microscopy grid, allowing the structural characterization down to atomic resolution. The structure-property relationship for such amorphous materials at 2D limit was then established based on a combination of experiment and density-functional theory simulation. The unique physical properties of 2D amorphous carbon suggest it as a promising candidate to accompany crystalline low-dimensional semiconductors and semimetals in future nanoelectronic devices, and its performance advantages over conventional 3D metal oxides and polycrystalline 2D insulators were verified in experiment : Serving as the gate dielectric in graphene transistors, the absence of grain boundaries in 2D amorphous carbon allows us to aggressively reduce the gate-dielectric thickness down to merely three-atomic layers to enhance the capacitance coupling between the gate and the channel, while still maintaining a low leakage current density below 10 -4 A/cm 2 , which is many orders of magnitude lower compared to the leakage current across the polycrystalline hexagonal boron nitride with the same thickness. Meanwhile, the perfectly clean van der Waals interface it forms with the graphene channel leads to the sharply reduction of the device hysteresis and thus average effective mobility twice as high as that of devices built with bulk SiO 2 as gate dielectric. Serving as the switching medium in resistive random access memory cells, the atomic-level thinness of the 2D amorphous carbon enables low operating voltage below 0.4 V, fast switching time 10 4 ) and data retention (>10 years @ 85 o C). Moreover, its atomic structural heterogeneity provides well defined ion-transport pathways as suggested in ab initio simulations, leading to the drastically improved device-to-device and cycle-to-cycle uniformity with the standard deviation of Set/Reset voltages below 50 mV in experiment, which is among the lowest values ever reported for memristors. The concurrent achievement of all these performance metrics has not been accomplished with memristors built on either bulk oxides or polycrystalline 2D materials.

Low-Temperature Synthesis of Boron Nitride As a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices.

Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

General low-temperature growth of two-dimensional nanosheets from layered and nonlayered materials

Ultraflat Single-Crystal Hexagonal Boron Nitride for Wafer-Scale Integration of a 2D-Compatible High-Κ Metal Gate

Recent progress in low-temperature CVD growth of 2D materials

(Invited) Two-Dimensional Amorphous Carbon Prepared from Solution Precursor As Novel Dielectrics for Nanoelectronics

Two‐dimensional Boron Nitride for Electronics and Energy Applications

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Scalable low-temperature synthesis of two-dimensional materials beyond graphene

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

First Principles on the Structure and Electronic Properties of Vertically Regulated Two-Dimensional Cubic Boron Nitride and Diamond Like Carbon Sandwich Heterostructures

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

High-Quality Hexagonal Boron Nitride from 2D Distillation

Salt‐Assisted Low‐Temperature Growth of 2D Bi2O2Se with Controlled Thickness for Electronics

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Synthesis of Ultra-Thin Two-Dimensional SiC Using the CVD Method