Abstract:Two-dimensional (2D) materials, consisting of atomically thin crystal layers bound by the van der Waals force, have attracted much interest because of their potential in diverse technologies, including electronics, optoelectronics and catalysis1–10. In particular, solution-processable 2D semiconductor (such as MoS2) nanosheets are attractive building blocks for large-area thin-film electronics. In contrast to conventional zero- and one-dimensional nanostructures (quantum dots and nanowires, respectively), which are typically plagued by surface dangling bonds and associated trapping states, 2D nanosheets have dangling-bond-free surfaces. Thin films created by stacking multiple nanosheets have atomically clean van der Waals interfaces and thus promise excellent charge transport11–15. However, preparing high-quality solution-processable 2D semiconductor nanosheets remains a challenge. For example, MoS2 nanosheets and thin films produced using lithium intercalation and exfoliation are plagued by the presence of the metallic 1T phase and poor electrical performance (mobilities of about 0.3 square centimetres per volt per second and on/off ratios of less than 10)2,12, and materials produced by liquid exfoliation exhibit an intrinsically broad thickness distribution, which leads to poor film quality and unsatisfactory thin-film electrical performance (mobilities of about 0.4 square centimetres per volt per second and on/off ratios of about 100)14,16,17. Here we report a general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets, which involves the electrochemical intercalation of quaternary ammonium molecules (such as tetraheptylammonium bromide) into 2D crystals, followed by a mild sonication and exfoliation process. By precisely controlling the intercalation chemistry, we obtained phase-pure, semiconducting 2H-MoS2 nanosheets with a narrow thickness distribution. These nanosheets were then further processed into high-performance thin-film transistors, with room-temperature mobilities of about 10 square centimetres per volt per second and on/off ratios of 106 that greatly exceed those obtained for previous solution-processed MoS2 thin-film transistors. The scalable fabrication of large-area arrays of thin-film transistors enabled the construction of functional logic gates and computational circuits, including an inverter, NAND, NOR, AND and XOR gates, and a logic half-adder. We also applied our approach to other 2D materials, including WSe2, Bi2Se3, NbSe2, In2Se3, Sb2Te3 and black phosphorus, demonstrating its potential for generating versatile solution-processable 2D materials.

Gas-phase alkali halide assisted stable precursor supply from zirconium carbide for the synthesis of 2D large-sized ZrS2 nanosheets

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Atomic layer deposition of two-dimensional layered zirconium sulfide

H2S-assisted growth of 2D MS2 (M = Ti, Zr, Nb)

Controllable Growth of 2D V3S5 Single Crystal by Chemical Vapor Deposition

Epitaxial growth of large area ZrS2 2D semiconductor films on sapphire for optoelectronics

In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide.

Controlled Synthesis of Zrs2 Mono Layer and Few Layers on Hexagonal Boron Nitride

Highly Stable 3D Supercuboids to 2D ZnSe Nanosheets: Formation for a High-Efficiency Catalysis System.

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Facile Synthesis of Zirconium Trisulfide and Hafnium Trisulfide Nanobelts: Growth Mechanism and Raman Spectroscopy

Synthesis of two‐dimensional nonlayered α‐Nb2O5 nanosheets by the growth promoter of sulfur and alkali halides

Sodium chloride-assisted CVD enables controlled synthesis of large single-layered MoS2

Mass Production of Two-Dimensional Oxides by Rapid Heating of Hydrous Chlorides

Solvent‐Induced Growth of Free‐Standing 2D Si Nanosheets

Stable alkali halide vapor assisted chemical vapor deposition of 2D HfSe2 templates and controllable oxidation of its heterostructures

Utilizing a NaOH Promoter to Achieve Large Single-Domain Monolayer WS2 Films Via Modified Chemical Vapor Deposition.

Hard-templated engineering of versatile 2D amorphous metal oxide nanosheets

Kinetically Controlled Growth of Sub‐Millimeter 2D Cs 2 SnI 6 Nanosheets at the Liquid–Liquid Interface

Solution-processable 2D semiconductors for high-performance large-area electronics