Abstract:Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale structure of CVD-grown wafer-scale (∼25 cm2) h-BN sheets ranging in thickness from 1 to 20 monolayers. Atomic-scale images of h-BN on Au and graphene/Au substrates obtained by scanning tunneling microscopy reveal high h-BN crystalline quality in monolayer samples. Further characterization of 1–20 monolayer samples indicates uniform thickness for wafer-scale areas; this thickness control is a result of precise control of the precursor flow rate, deposition temperature and pressure. Raman and infrared spectroscopy indicate the presence of B–N bonds and reveal a linear dependence of thickness with growth time. X-ray photoelectron spectroscopy shows the film stoichiometry, and the B/N atom ratio in our films is 1 ± 0.6% across the range of thicknesses. Electrical current transport in metal/insulator/metal (Au/h-BN/Au) heterostructures indicates that our CVD-grown h-BN films can act as excellent tunnel barriers with a high hard-breakdown field strength. Our results suggest that large-area h-BN films are structurally, chemically and electronically uniform over the wafer scale, opening the door to pervasive application as a dielectric in layered nanoelectronic and nanophotonic heterostructures.

Structure Of Chemically Derived Mono- And Few-Atomic-Layer Boron Nitride Sheets

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

Structural Characterization of Boron Sheets Beyond the Monolayer and Implication for Experimental Synthesis and Identification.

Facile synthesis of vertically aligned hexagonal boron nitride nanosheets hybridized with graphitic domains

Few-atomic-layered boron carbonitride nanosheets prepared by chemical vapor deposition.

Convert Graphene Sheets to Boron Nitride and Boron Nitride–carbon Sheets Via a Carbon-Substitution Reaction

Two-dimensional boron monolayer sheets.

Catalyst-free growth of mono- and few-atomic-layer boron nitride sheets by chemical vapor deposition.

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Van Der Waals Epitaxy and Characterization of Hexagonal Boron Nitride Nanosheets on Graphene.

From Two- to Three-Dimensional van der Waals Layered Structures of Boron Crystals: An Ab Initio Study

Preparation of Few Layers Hexagonal Boron Nitride Nanosheets Via High-Pressure Homogenization

Formation of Monolayer and Few-Layer Hexagonal Boron Nitride Nanosheets Via Surface Segregation

Predicting the Structural and Electronic Properties of Two-Dimensional Single Layer Boron Nitride Sheets

Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges.

From Boron Cluster to Two-Dimensional Boron Sheet on Cu(111) Surface: Growth Mechanism and Hole Formation

Dirac Nodal Lines and Tilted Semi-Dirac Cones Coexisting in a Striped Boron Sheet

Fabrication of Boron Nitride Nanosheets by Exfoliation.