Abstract:In this work, we use ReaxFF molecular dynamics simulations to investigate the interaction between water molecules and silicon surfaces with different orientations under ambient temperatures of 300 and 500 K. We studied the water adsorption and dissociation processes as well as the silicon oxidation process on the Si (100), (110), and (111) surfaces. The simulation results indicate that water can adsorb on the Si surfaces in the forms of molecular adsorption and dissociative adsorption, making the surfaces terminated by H2O, OH, and H species. The molecular adsorption of H2O dominates the (100) and (110) surfaces, whereas the dissociative adsorption dominates the (111) surface. Besides, the adsorbed hydroxyl oxygen can insert into the Si-Si bond of the substrate to make the surface oxidized, forming the Si-O-Si bonds. Our simulation results also indicate that the (100) surface is mostly terminated by H whereas (111) is mostly terminated by OH. The higher temperature causes more H2O to dissociate and also make all these surfaces more oxidized. Our results are consistent with most experiments. This study sheds lights on the wet oxidation process of Si and Si surface structure evolution in microelectromechanical systems as well as the Si chemical mechanical polishing process.

FTIR spectroscopic studies of the stabilities and reactivities of hydrogen-terminated surfaces of silicon nanowires.

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Stability of the Si–H Bond on the Hydrogen-Terminated Si(1 1 1) Surface Studied by Sum Frequency Generation

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Unmasking Fluorinated Moieties on the Surface of Hydride-Terminated Silicon Nanoparticles

Density Functional Theory Study on the Oxidation of Hydrosilylated Silicon Nanocrystals

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Fluorination Effects on the Structural Stability and Electronic Properties of sp3 Type Silicon Nanotubes

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfaces

Hydrogen Evolution from Silicon Nanowire Surfaces

The nature of photocatalytic hydrogen generation on silicon nanowires prepared by MAWC

Effect of Hydrogen Treatment Upon Silicon Surface Investigated with the Multiple Internal Reflection Infrared Spectroscopy

Infrared Spectra of Silicon Nanowires

Surface Orientation and Temperature Effects on the Interaction of Silicon with Water: Molecular Dynamics Simulations Using ReaxFF Reactive Force Field.

Characterization of Hydrogen-Terminated Si(111) Surfaces by Sum-Frequency Surface Vibrational Spectroscopy

Hydrogenation and Hydrocarbonation and Etching of Single-Walled Carbon Nanotubes.

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface

Hydrogenation and Hydro-Carbonation and Etching of Single-Walled Carbon Nanotubes