Abstract:Studying the surface states of Bi2Se3 and Bi2Te3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi-2(SexTe1-x)(3) may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi-2(SexTe1-x)(3) nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi2Se3 to Bi2Te3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (similar to 10(19) cm(-3)) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives alpha of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is similar to T-0.49 within the appropriate field range (similar to 0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other.

Effects of magnetic doping on weak antilocalization in narrow Bi2Se3 nanoribbons.

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Crossover Between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator

Weak localization and anti-localization in rare earth doped topological insulators

Weak Localization Effects As Evidence for Bulk Quantization in Bi 2 Se 3 Thin Films

Weak antilocalization in Bi2(Se(x)Te(1-x))3 nanoribbons and nanoplates.

Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films

Topological Quantum Weak Antilocalization Limit and Anomalous Hall Effect in Semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey Heterostructure

Emerging Weak Localization Effects on A Topological Insulator-Insulating Ferromagnet (Bi2se3-Eus) Interface

Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe 12 O 19

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

A comparative study of magnetic (Mn) and non-magnetic (In) elements-doped Bi2Se3 topological insulator: Structural, magnetic, transport, and weak anti-localization property exploration

Electron interaction and localization in ultrathin topological insulator films

Universal Conductance Fluctuations And Phase-Coherent Transport In A Semiconductor Bi2o2se Nanoplate With Strong Spin-Orbit Interaction

One-dimensional antilocalization of electrons from spin disorder probed by nonlinear Hall effect

Nontrivial Surface State Transport In Bi2se3 Topological Insulator Nanoribbons

Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi$_2$O$_2$Se nanoplate with strong spin-orbit interaction

Quantum Transport Characteristics of Heavily Doped Bismuth Selenide Nanoribbons

Influence of magnetic (Fe) and non-magnetic (In) doping on structural, magnetic, and weak anti-localization properties of Bi2Te3 topological insulator