Beam Pen Lithography.
Fengwei Huo,Gengfeng Zheng,Xing Liao,Louise R. Giam,Jinan Chai,Xiaodong Chen,Wooyoung Shim,Chad A. Mirkin
DOI: https://doi.org/10.1038/nnano.2010.161
IF: 38.3
2010-01-01
Nature Nanotechnology
Abstract:Lithography techniques are currently being developed to fabricate nanoscale components for integrated circuits, medical diagnostics and optoelectronics 1 , 2 , 3 , 4 , 5 , 6 , 7 . In conventional far-field optical lithography, lateral feature resolution is diffraction-limited 8 . Approaches that overcome the diffraction limit have been developed 9 , 10 , 11 , 12 , 13 , 14 , but these are difficult to implement or they preclude arbitrary pattern formation. Techniques based on near-field scanning optical microscopy can overcome the diffraction limit, but they suffer from inherently low throughput and restricted scan areas 15 , 16 , 17 . Highly parallel two-dimensional, silicon-based, near-field scanning optical microscopy aperture arrays have been fabricated 18 , but aligning a non-deformable aperture array to a large-area substrate with near-field proximity remains challenging. However, recent advances in lithographies based on scanning probe microscopy have made use of transparent two-dimensional arrays of pyramid-shaped elastomeric tips (or ‘pens’) for large-area, high-throughput patterning of ink molecules 19 , 20 , 21 , 22 , 23 . Here, we report a massively parallel scanning probe microscopy-based approach that can generate arbitrary patterns by passing 400-nm light through nanoscopic apertures at each tip in the array. The technique, termed beam pen lithography, can toggle between near- and far-field distances, allowing both sub-diffraction limit (100 nm) and larger features to be generated.