Abstract:Ultrafast pulsed electron sources with spatial coherence have attracted significant interest in emerging applications such as scientific instruments of ultrafast electron microscopy [1-3] and electron beam lithography [4], and also as sources of X-ray [5] and micro- and THz-waves [6-9]. In particular, high-frequency electron bunch trains generated directly from the cathode surface can not only dramatically reduce dimensions and weight through the elimination of the pre-modulation circuit, but can also provide extremely high efficiency and improve the power in the electron beam devices due to coherence effects. One solution is employing photoemission from electron sources driven by ultrashort laser pulses for such emerging applications. Metallic flat photocathodes and recently metallic nanotips have been employed. However, a low quantum efficiency (QE), typically of approximately 0.01 %, and a large work function require a high-power UV laser to generate an intense electron beam. Negative electron affinity (NEA) semiconductor photocathodes such as NEA GaAs can provide QE as high as ~ 10 % [10], operating using visible laser light irradiation. However, the NEA surface is fragile and easily damaged by residual gas adsorption or beam extraction. In this presentation, we introduce the research and development of gated Si-FEAs with a volcano structure and planar-type electron emission devices based on a MOS diode structure and discuss the potential of the devices as a photocathode of the devices operating without NEA surface treatment. We investigate the optical properties of emitted electrons from the devices under visible laser light irradiation. The results indicate that Si-based electron emission devices with a fully optimized structure hold promise as a photocathode with a high QE and a high-speed response for generating a train of ultrashort electron bunches, operating without NEA surface treatment. References [1] H. Dömer, and O. Bostanjoglo, Rev. Sci. Instrum. 74, 4369 (2003). [2] W. E. King, G. H. Campbell, A. Frank, and B. Reed, J. Appl. Phys. 97, 111101 (2005). [3] K. Bücker, M. Picher, O. Crégut, T. LaGrange, B. W. Reed, S. T. Park, D. J. Masiel, and F. Banharta, Ultramicroscopy 117, 8 (2016). [4] J. E. Schneider, J. Vac. Sci. Technol. B 16, 3192 (1998). [5] X. J. Wang, X. Qiu, and I. Ben-Zvi, Phys. Rev. E 54 , R3121 (1996). [6] C. A. Spindt, C. E. Holland, P. R. Schwoebel, and I. Brodie, J. Vac. Sci. Technol. B 14 , 1986 (1996). [7] K. L. Jensen, R. H. Abrams, and R. K. Paker, J. Vac. Sci. Technol. B 16 , 749 (1998). [8] H. Ishizuka, Y. Kawamura, K. Yokoo, H. Mimura, H. Shimawaki and A. Hosono, Nucl. Instr. Meth. Phys. Res. A 445 , 276 (2000). [9] Y. Neo, H. Shimawaki, T. Matsumoto and H. Mimura, J. Vac. Sci. Technol. B 23 , 840 (2005). [10] W. Liu, S. Zhang, M. Stutzman, and M. Poelker, Phys. Rev. Accel. Beams 19 , 103402 (2016).

Experiments Producing Nanopatterned Electron Beams

Nanopatterned electron beams for temporal coherence and deterministic phase control of x-ray free-electron lasers

Theoretical and experimental electron diffraction intensity maps for single crystal silicon from an ultrafast source

Experimental considerations in electron beam transport on a nanophotonic chip using alternating phase focusing

Imaging Single Electrons to Enable the Generation of Ultrashort Beams for Single-Shot Femtosecond Relativistic Electron Diffraction

Fabrication of Nanoscale Patterns in Lithium Fluoride Crystal Using a 13.5 Nm Schwarzschild Objective and a Laser Produced Plasma Source.

Quantitative Agreement Between Dynamical Rocking Curves in Ultrafast Electron Diffraction for X-Ray Lasers.

Imaging Nanometer-Scale Beamlets Arrays Of Relativistic Electron Beams

Highly uniform silicon nanopatterning with deep-ultraviolet femtosecond pulses

Nanometer Emittance Ultralow Charge Beams From Rf Photoinjectors

Imaging the field inside nanophotonic devices

Ultra-High Brightness Electron Beams from Very-High Field Cryogenic Radio-frequency Photocathode Sources

Ultrafast Relativistic Electron Nanoprobes

In Situ TEM Near-Field Optical Probing of Nanoscale Silicon Crystallization

Comparison of theory, simulation, and experiment for dynamical extinction of relativistic electron beams diffracted through a si crystal membrane

Ultrafast Electron Diffraction with Megahertz MeV Electron Pulses from a Superconducting Radio-Frequency Photoinjector

Versatile, high brightness, cryogenic photoinjector electron source

Nonlinearly Shaped Pulses in Photoinjectors and Free-Electron Lasers

Single-shot Coherent Diffraction Imaging of Microbunched Relativistic Electron Beams for Free-Electron Laser Applications.

Relativistic electron diffraction at the UCLA Pegasus photoinjector laboratory

(Invited) Photo-Assisted Electron Emission from Silicon-Based Electron Emission Devices