Abstract:Ultrafast pulsed electron sources with spatial coherence have attracted significant interest in emerging applications such as scientific instruments of ultrafast electron microscopy [1-3] and electron beam lithography [4], and also as sources of X-ray [5] and micro- and THz-waves [6-9]. In particular, high-frequency electron bunch trains generated directly from the cathode surface can not only dramatically reduce dimensions and weight through the elimination of the pre-modulation circuit, but can also provide extremely high efficiency and improve the power in the electron beam devices due to coherence effects. One solution is employing photoemission from electron sources driven by ultrashort laser pulses for such emerging applications. Metallic flat photocathodes and recently metallic nanotips have been employed. However, a low quantum efficiency (QE), typically of approximately 0.01 %, and a large work function require a high-power UV laser to generate an intense electron beam. Negative electron affinity (NEA) semiconductor photocathodes such as NEA GaAs can provide QE as high as ~ 10 % [10], operating using visible laser light irradiation. However, the NEA surface is fragile and easily damaged by residual gas adsorption or beam extraction. In this presentation, we introduce the research and development of gated Si-FEAs with a volcano structure and planar-type electron emission devices based on a MOS diode structure and discuss the potential of the devices as a photocathode of the devices operating without NEA surface treatment. We investigate the optical properties of emitted electrons from the devices under visible laser light irradiation. The results indicate that Si-based electron emission devices with a fully optimized structure hold promise as a photocathode with a high QE and a high-speed response for generating a train of ultrashort electron bunches, operating without NEA surface treatment. References [1] H. Dömer, and O. Bostanjoglo, Rev. Sci. Instrum. 74, 4369 (2003). [2] W. E. King, G. H. Campbell, A. Frank, and B. Reed, J. Appl. Phys. 97, 111101 (2005). [3] K. Bücker, M. Picher, O. Crégut, T. LaGrange, B. W. Reed, S. T. Park, D. J. Masiel, and F. Banharta, Ultramicroscopy 117, 8 (2016). [4] J. E. Schneider, J. Vac. Sci. Technol. B 16, 3192 (1998). [5] X. J. Wang, X. Qiu, and I. Ben-Zvi, Phys. Rev. E 54 , R3121 (1996). [6] C. A. Spindt, C. E. Holland, P. R. Schwoebel, and I. Brodie, J. Vac. Sci. Technol. B 14 , 1986 (1996). [7] K. L. Jensen, R. H. Abrams, and R. K. Paker, J. Vac. Sci. Technol. B 16 , 749 (1998). [8] H. Ishizuka, Y. Kawamura, K. Yokoo, H. Mimura, H. Shimawaki and A. Hosono, Nucl. Instr. Meth. Phys. Res. A 445 , 276 (2000). [9] Y. Neo, H. Shimawaki, T. Matsumoto and H. Mimura, J. Vac. Sci. Technol. B 23 , 840 (2005). [10] W. Liu, S. Zhang, M. Stutzman, and M. Poelker, Phys. Rev. Accel. Beams 19 , 103402 (2016).

(Invited) Photo-Assisted Electron Emission from Silicon-Based Electron Emission Devices

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Sub-nanosecond Electron Emission from Electrically Gated Field Emitting Arrays

Photoemission from a laser-driven storage oxide cathode

Surface Plasmon-Mediated Enhanced Field Electron Emission Based on Metasurfaces with a Nano-Gap Driven by LEDs

Anomalous Correlation Between Quantum Efficiency and Transverse Momentum Spread in Semiconductor Cathode Photoemission

Auger photoemission as a laser-like coherent cathode

Overview of the Semiconductor Photocathode Research in China

Photoelectron Emission and Avalanche Electron-Emission from Shallow Si P-N-Junctions

Development of massively parallel electron beam direct write lithography using active-matrix nanocrystalline-silicon electron emitter arrays

Electron emission from the oxide-coated cathode under the laser illumination

Photoemission and Degradation of Semiconductor Photocathode

Electron Field Emission Enhanced By Geometric And Quantum Effects From Nanostructured Algan/Gan Quantum Wells

Surface-Plasmon Resonance-Enhanced Multiphoton Emission Of High-Brightness Electron Beams From A Nanostructured Copper Cathode

Coherent ultrafast photoemission from a single quantized state of a one-dimensional emitter

Optical Resonance Enhanced Cs Activated Nano-Structured Ag Photocathode

Highly Efficient Nonlinear Optical Emission from a Subwavelength Crystalline Silicon Cuboid Mediated by Supercavity Mode.

Plasmon-enhanced photoemission from Au nanoparticles covered with cesiated film

High brightness CW electron beams from Superconducting RF photoemission gun

Quantum Efficiency Enhancement by Mie Resonance from GaAs Photocathodes Structured with Surface Nanopillar Arrays

Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy