Abstract:High spin-orbit coupling and low effective mass of electrons in InAs nanowires makes it an attractive material for studying quantum physics in mesoscopic and nanoscale quantum devices. We first study the transport properties of FET devices made of InAs nanowires of diameter in the range of 35-70 nm. The temperature dependence of electron mobility in InAs nanowires from 10-200 K exhibits a positive slope below approximately 40 K, then turns over to a negative slope at higher temperatures. This is explained by Coulomb scattering from the surface donor like states that give rise to a subsurface accumulation layer and the thermal activation of these surface donors. The scattering rates are calculated using a momentum relaxation time approximation. The transition probabilities between the self-consistent Poisson-Schrödinger states of a 50 nm diameter nanowire are calculated using Fermi’s golden rule. The results clarify the dominant scattering mechanism in InAs nanowires and signify the need for surface passivation to obtain high mobility devices. In a second study, we model a gate defined double quantum dot in the nanowire with high spin-orbit coupling in order to determine the precise gate voltage dependence of the exchange Hamiltonian. This modelling is critical for designing two-qubit quantum logic operations in the nanowire double dot architecture. A quantum double well structure is simulated based on the realistic potential created by a set of fine local electrostatic gates in the presence of nanowire surface accumulation layer. An effective spin Hamiltonian is derived for a pair of interacting electrons localized in the double dot system in the presence of a strong spin-orbit coupling. The accuracy of the effective Hamiltonian is established by a strong agreement obtained between the dynamics generated by the effective Hamiltonian with those obtained by a numerically exact solution of the time-dependent Schrödinger equation. The parametric dependences of the effective exchange Hamiltonian on external magnetic field, barrier gate voltage, and spin-orbit field is determined. This opens the door to designing optimal pulses for high fidelity quantum gates in real InAs nanowire devices.

Electrical properties of self-assembled branched InAs nanowire junctions.

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Rational Growth of Branched Nanowire Heterostructures with Synthetically Encoded Properties and Function

A Nanoscale Technique Of The Assembly Approach For Inas Nanowire Nano Device

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Anomalous Photoelectrical Properties Through Strain Engineering Based on a Single Bent InAsSb Nanowire

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Synthesis, Structure, and Multiply Enhanced Field-Emission Properties of Branched ZnS Nanotube-in Nanowire Core-Shell Heterostructures.

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures via selective-area van der Waals epitaxy

Crossover from Coulomb Blockade to Ballistic Transport in InAs Nanowire Devices

Hyperbranched lead selenide nanowire networks.

Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires

Imaging Electrical Conduction through InAs Nanowires

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Electrical characterization of chemical and dielectric passivation of InAs nanowires

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale