Selective Area Growth of PbTe Nanowire Networks on InP
Jason Jung,Sander G. Schellingerhout,Markus F. Ritter,Sofieke C. ten Kate,Orson A.H. van der Molen,Sem de Loijer,Marcel A. Verheijen,Heike Riel,Fabrizio Nichele,Erik P.A.M. Bakkers
DOI: https://doi.org/10.1002/adfm.202208974
IF: 19
2022-10-19
Advanced Functional Materials
Abstract:Hybrid semiconductor–superconductor nanowires are promising candidates as quantum information processing devices. Here, the growth of large scale PbTe networks by molecular beam epitaxy is introduced. The high quality of the resulting material is confirmed by Hall bar measurements yielding mobilities up to 5600 cm2 (Vs)‐1, and Aharonov–Bohm experiments indicating a low‐temperature phase coherence length exceeding 21 μm. Hybrid semiconductor–superconductor nanowires are promising candidates as quantum information processing devices. The need for scalability and complex designs calls for the development of selective area growth techniques. Here, the growth of large scale lead telluride (PbTe) networks is introduced by molecular beam epitaxy. The group IV‐VI lead‐salt semiconductor is an attractive material choice due to its large dielectric constant, strong spin‐orbit coupling, and high carrier mobility. A crystal re‐orientation process during the initial growth stages leads to single crystalline nanowire networks despite a large lattice mismatch, different crystal structure, and diverging thermal expansion coefficient to the indium phosphide (InP) substrate. The high quality of the resulting material is confirmed by Hall bar measurements, indicating mobilities up to 5600 cm2 (Vs)−1, and Aharonov–Bohm experiments, indicating a low‐temperature phase coherence length exceeding 21 μm. Together, these properties show the high potential of the system as a basis for topological networks.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology