Axially Segmented Semiconductor Heteronanowires
Yi Li,Tao-Tao Zhuang,Chong Zhang,Liang Wu,Shi-Kui Han,Shu-Hong Yu
DOI: https://doi.org/10.1021/accountsmr.0c00004
2020-01-01
Accounts of Materials Research
Abstract:Programming nanoscale functional objects into complex, sophisticated heterostructures that tremendously outperform their solo objects and even bring about exotic chemical/physical properties offers exciting routes toward a spectrum of applications in photonics and electronics. The development in synthetic chemistry over past decades has enabled a library of hybrid nanostructures, such as core-shell, patchy, dimer, hierarchical/branched ones, etc. Nevertheless, the material combinations of these non-van der Waals solids are largely limited by the rule of lattice-matched epitaxy thereof. As an emerging class of heterostructures, axially segmented nanowires (ASNWs) offer an alternative but effective approach to epitaxially integrating the conventional non-van der Waals solids. The large lattice-mismatch tolerance in ASNWs permits vast material combinations, broad size modulations, and flexible interfacial strain engineering, signifying the great potentials for engineering their photon utilizations, band structures, features of charge carriers or excitons, and some other emerging properties. Unfortunately, ASNWs with on-demand, high-precision control over composition, shape, dimension, crystal phase, interface, and periodicity remain so far synthetically challenging. By steering the chemoselective reactions, one has access to high-precision ASNWs. In this Account, we describe the state-of-the-art synthetic strategies for chemoselectivity control. We categorize them into (i) unidirectional/bidirectional sequential additions, which include selective area epitaxy, catalyzed growth, and end-facet-seeded growth, and (ii) regiospecific one-off transformations, which include ionic exchange reaction, strain/thermal induced phase segregation and transition, Plateau-Rayleigh instability, regioselective heterogeneous nucleation as ruled by lattice match, defect, and surface charges, and nanomasking. We uncover the chemical principles behind from thermodynamic and kinetic aspects. Then we further offer insights into their fundamental physics (including carrier/photon/phonon confinement, mixed dimensionality, quantum dot-nanowire interaction, and interdot coupling effect) that are strongly correlated with a spectrum of applications, highlighting how the precise control of compositions and structures ultimately dictates their properties and functions. In the end, we conclude by describing current challenges and future directions of this field in terms of material synthesis, growth mechanism, exotic physics, and performance optimization. By crafting ASNWs at atomic precision, high-performance ASNWs with sophisticated electronic and phonon structures can be envisioned ultimately for applications in diverse fields, spanning from solar energy conversion and thermoelectrics to optoelectronics and quantum communications.