3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.
Jiangtao Qu,Sichao Du,Tim Burgess,Changhong Wang,Xiangyuan Cui,Qiang Gao,Weichao Wang,Hark Hoe Tan,Hui Liu,Chennupati Jagadish,Yingjie Zhang,Hansheng Chen,Mansoor Khan,Simon Ringer,Rongkun Zheng
DOI: https://doi.org/10.1002/adma.201701888
IF: 29.4
2017-01-01
Advanced Materials
Abstract:III-V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applications; however, the 3D structure and chemistry at the atomic-scale inside the nanowires remain unclear, which hinders tailoring the nanowires for specific applications. Here, atom probe tomography is used in conjunction with a first-principles simulation to investigate the 3D structure and chemistry of InGaAs nanowires, and reveals i) the nanowires form a spontaneous core-shell structure with a Ga-enriched core and an In-enriched shell, due to different growth mechanisms in the axial and lateral directions; ii) the shape of the core evolves from hexagon into Reuleaux triangle and grows larger, which results from In outward and Ga inward interdiffusion occurring at the core-shell interface; and iii) the irregular hexagonal shell manifests an anisotropic growth rate on {112}A and {112}B facets. Accordingly, a model in terms of the core-shell shape and chemistry evolution is proposed, which provides fresh insights into the growth of these nanowires.