Abstract:We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire conductance vs. tip position spatially map the conductance of InAs nanowires at liquid He temperatures. Plots of conductance vs. back gate voltage without the tip present show complex patterns of Coulomb-blockade peaks. Images of nanowire conductance identify multiple quantum dots located along the nanowire - each dot is surrounded by a series of concentric rings corresponding to Coulomb blockade peaks. An image locates the dots and provides information about their size. The rings around individual dots interfere with each other like Coulomb blockade peaks of multiple quantum dots in series. In this way, the SPM tip can probe complex multi-dot systems by tuning the charge state of individual dots. The nanowires were grown from metal catalyst particles and have diameters ~ 80 nm and lengths 2 to 3 um.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study and visualize in detail the electron transport characteristics in InAs nanowires through experimental means, especially under low - temperature conditions, and use scanning probe microscopy (SPM) imaging technology to reveal the charge distribution inside the nanowires and the behavior of quantum dots. Specifically, the main research objectives include: 1. **Understanding the local characteristics of electron flow in nanowires**: Traditional transport measurement methods can only provide the average electrical properties of the entire nanowire, but cannot reveal the local charge distribution and transport mechanism. In this study, by using a charged SPM probe as a movable gate, it is possible to directly observe and regulate the flow of electrons in the nanowire on the nanoscale. 2. **Identifying and characterizing quantum dots in nanowires**: Through SPM imaging, researchers can identify multiple quantum dots formed along the nanowire, and obtain information about their positions, sizes, and interactions by observing the Coulomb blockade rings around these quantum dots. This helps to gain a deeper understanding of the behavior of complex multi - quantum - dot systems in nanowires. 3. **Exploring the electrical properties of nanowire devices**: By changing the back - gate voltage and the probe voltage, the charge state of the quantum dots in the nanowire can be regulated, so as to study the conductance changes under different conditions. This is of great significance for the development of new nano - electronic devices based on semiconductor nanowires. 4. **Verifying theoretical models**: The experimental results are consistent with theoretical predictions, such as the change in the conductance peak spacing caused by the Coulomb blockade effect, which further verifies the effectiveness of relevant theoretical models. In conclusion, this paper aims to use advanced scanning probe microscopy technology to perform high - resolution imaging of electron transport in InAs nanowires to reveal their internal structures and electrical properties, providing important experimental basis and technical support for the future development of nanoelectronics.

Imaging Electrical Conduction through InAs Nanowires

Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Imaging Simulation of Charged Nanowires in TEM with Large Defocus Distance.

Imaging Coherent Electron Flow

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Crossover from Coulomb Blockade to Ballistic Transport in InAs Nanowire Devices

Supercurrent Through InAs Nanowires with Highly Transparent Superconducting Contacts

Charge Transport in InAs Nanowire Josephson Junctions

Phase-Coherent Transport And Spin Relaxation In Inas Nanowires Grown By Molecule Beam Epitaxy

Imaging the mechanical properties of nanowire arrays

Directly Revealing the Electrical Annealing of Nanoscale Conductive Networks with Solid Spins

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

Imaging Electron Motion in Graphene

Regimes of electronic transport in doped InAs nanowire

Electrical characterization of chemical and dielectric passivation of InAs nanowires

Direct Imaging of the Onset of Electrical Conduction in Silver Nanowire Networks by Infrared Thermography: Evidence of Geometrical Quantized Percolation

Correlations of mutual positions of charge density waves nodes in side-by-side placed InAs wires measured with scanning gate microscopy

Gate-Tunable Kinetic Inductance in Proximitized Nanowires

Observation of Space-Charge-Limited Transport in InAs Nanowires