What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand and reveal the correlation of the charge - density - wave (CDW) node positions in adjacent InAs nanowires and their formation mechanisms under low - temperature conditions. Specifically, researchers use scanning - gate microscopy (SGM) technology, with the conductive atomic - force - microscope tip as a movable gate, to measure and analyze the position correlation and interaction of charge - density - wave nodes in these nanowires. ### Research Background and Problems 1. **Charge - Density - Wave (CDW) Phenomenon**: The charge - density - wave phenomenon observed in InAs nanowires has attracted wide attention. This phenomenon is manifested as a periodically modulated structure formed by electrons in the nanowires, and its wavelength can range from several hundred nanometers to several micrometers. 2. **Limitations of Existing Models**: Three possible mechanisms have been proposed to explain the formation of charge - density - waves: - **Simple Standing - Wave Model**: It is assumed that the electron charge has no effect on the position and wavelength of the charge - density - wave. - **Friedel Oscillations**: Formed by electrons in Luttinger liquids. - **Wigner Crystallization**: Formed by electrons in Luttinger liquids. 3. **Experimental Challenges**: Existing experimental methods can usually only reveal the overall response, but not the local characteristics. Therefore, more precise techniques are required to study the local behavior of charge - density - waves. ### Research Objectives - **Reveal the Correlation of Charge - Density - Wave Node Positions**: Through SGM technology, researchers hope to reveal the correlation of charge - density - wave node positions in adjacent InAs nanowires. - **Verify the Influence of Charge Interactions**: Verify the importance of charge interactions (especially Coulomb interactions) in the formation of charge - density - waves. - **Exclude Simple Models**: Exclude the simple standing - wave model through experimental results and provide evidence to support or refute the other two models. ### Experimental Design - **Sample Preparation**: Use selective - area metal - organic vapor - phase epitaxy to prepare undoped InAs nanowires with a diameter of 100 nm and a length of 3.0 µm. - **Measurement Method**: Use SGM technology to scan at helium temperature (4.2 K), with the conductive atomic - force - microscope tip as a movable gate, at a distance of 300 nm (far - placed tip) or 200 nm (near - placed tip) from the sample surface. - **Data Analysis**: By analyzing the scanning images at different back - gate voltages, study the position, wavelength of charge - density - wave nodes and the correlation between them. ### Main Findings 1. **Correlation of Node Positions**: In the far - placed - tip mode, an obvious correlation of charge - density - wave node positions in adjacent nanowires was observed, including overall shift and "crystal - lattice - mismatch" defects. 2. **Importance of Coulomb Interactions**: The experimental results show that Coulomb interactions play a crucial role in the formation of charge - density - waves, especially in the case of longer wavelengths. 3. **Exclusion of the Simple Standing - Wave Model**: The experimental results indicate that the simple standing - wave model cannot explain the observed phenomena, supporting the possibility of Friedel oscillations and Wigner crystallization models. ### Conclusion This study for the first time reveals the correlation of charge - density - wave node positions in adjacent InAs nanowires through SGM technology and proves the important role of Coulomb interactions in the formation of charge - density - waves. This finding provides important experimental evidence for further understanding the electron behavior in low - dimensional systems and new directions for future theoretical research.

Correlations of mutual positions of charge density waves nodes in side-by-side placed InAs wires measured with scanning gate microscopy

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Charge Transport in InAs Nanowire Josephson Junctions

Regimes of electronic transport in doped InAs nanowire

Imaging Electrical Conduction through InAs Nanowires

Quantized conductance and its correlation to the supercurrent in a nanowire connected to superconductors.

Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

Flux-periodic supercurrent oscillations in an Aharonov-Bohm-type nanowire Josephson junction

Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.

Schottky Barrier Heights at the Interfaces Between Pure-Phase Inas Nanowires and Metal Contacts

Enhanced Electronic Correlations and Spin Effects in Asymmetric Quantum Point Contacts

Phase-Coherent Transport And Spin Relaxation In Inas Nanowires Grown By Molecule Beam Epitaxy

Gate Tunable Parallel Double Quantum Dots in InAs Double-Nanowire Devices

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Mapping of Electronic Band Gap along the Axis of Single InAs/InSbxAs1-x Heterostructured Nanowire