Abstract:Ground state binding energies of donor impurities in a strained wurtzite GaN/AlxGa1−xN heterojunction with a potential barrier of finite thickness are investigated using a variational approach combined with a numerical computation. The built-in electric field due to the spontaneous and piezoelectric polarization, the strain modification due to the lattice mismatch near the interfaces, and the effects of ternary mixed crystals are all taken into account. It is found that the binding energies by using numerical wave functions are obviously greater than those by using variational wave functions when impurities are located in the channel near the interface of a heterojunction. Nevertheless, the binding energies using the former functions are obviously less than using the later functions when impurities are located in the channel far from an interface. The difference between our numerical method and the previous variational method is huge, showing that the former should be adopted in further work for the relevant problems. The binding energies each as a function of hydrostatic pressure are also calculated. But the change is unobvious in comparison with that obtained by the variational method.

Effect of A Finite-Width Barrier on Binding-Energy in Modulation-Doped Quantum-Well Structures

Polaronic Effect on the Binding Energy of an Impurity with Varying Position in Parabolic Quantum Dots

Novel formula of effective width of quantum well structures

Effective Well Width Analysis in Quantum Well Struct ures

Binding energies of excitons in symmetrical GaAs/Al0.3Ga0.7As double quantum wells

Binding Energies of Impurity States in Strained Wurtzite Gan/Alxga1-Xn Heterojunctions with Finitely Thick Potential Barriers

Exciton Binding Energy As a Function of Barrier Width in Coupled Quantum Well Structures

Double Bound Polaron in Quantum Wells

Binding energies of hydrogenic impurities in lateral surface superlattice quantum well wires

Built-in electric field effect on donor impurities in strained wurtzite GaN/AlGaN asymmetric double quantum wells

Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch

Impurity Bound Polaron in A Magnetic Field in Quantum-Well Structures

Hydrogenic Impurity States in the Quantum-Well Wires with Lateral Surface-Structures

Band Hybridization Effect in InAs/GaSb Based Quantum Wells

Effect of Valence-Band Hybridization on the Exciton Spectra in Gaas-Ga1-Xalxas Quantum-Wells

Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect

Impurity Bound Polaron in Wurtzite Gan/Aln Quantum Wells: the Interface Optical-Phonon and the Built-In Electric Field Effects

Indispensable Factors Influence the Quasi-Bound Levels of Biased Multi-Barrier Quantum Well Structures

Bound Polarons in Asymmetric Quantum Wells in an Electric Field

Stark Shift Of Hydrogenic Impurity States In A Quantum-Well

Influence of well width fluctuations on the binding energy of excitons, charged excitons and biexcitons in GaAs-based quantum wells