Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch

Mher M. Aghasyan,Albert A. Kirakosyan

DOI: https://doi.org/10.1016/S1386-9477%2800%2900125-9

1999-12-09

Abstract:Within the framework of staircase infinitely deep (SIW) potential well model the effect of dielectric constant mismatch between the size-quantized semiconducting wire, coating and surrounding environment on impurity binding energy is considered. Calculations are done in both the absence and presence of magnetic field applied along the wire axis. By the variation method the dependences of binding energy of hydrogen-like impurity located on the wire axis on the alloy concentration, effective mass ratio, dielectric constant mismatch and magnetic field are found for the GaAs-Ga_{1-x}Al_{x}AS system.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to study the influence of dielectric constant mismatch on the impurity binding energy in size - quantized coated semiconductor wires. Specifically, through the step - like infinitely deep potential well model (SIW), the author considered the influence of the dielectric constant mismatch among semiconductor wires, coatings and the surrounding environment with different compositions on the hydrogen - like impurity binding energy on the wire axis in the presence and absence of a magnetic field applied along the wire axis.

### Main problem decomposition

1. **Influence of dielectric constant mismatch**:
- The influence of dielectric constant mismatch on the impurity binding energy in size - quantized semiconductor wires was studied.
- By changing the alloy concentration, effective mass ratio, dielectric constant mismatch and applied magnetic field, the change of hydrogen - like impurity binding energy was calculated.

2. **Influence generated by the magnetic field**:
- The influence of the magnetic field applied along the wire axis on the impurity binding energy was considered.
- The influence of the change of magnetic field strength on the binding energy was analyzed, and the interaction between the magnetic field and the size - quantization effect was explored.

3. **Influence of geometric structure**:
- The influence of geometric parameters such as wire radius and coating thickness on the impurity binding energy was studied.
- The change law of binding energy under different geometric structures was explored.

### Summary of mathematical formulas

The mathematical formulas involved in the paper mainly include:

- **Solution of Poisson equation**:
\[
V(r) =
\begin{cases}
N_0 K_0(\kappa r), & r > R_2 \\
C_1 I_0(\alpha r) + D_1 K_0(\alpha r), & R_1 \leq r \leq R_2 \\
A_0 I_0(\beta r), & r < R_1
\end{cases}
\]
where \(I_m\) and \(K_m\) are the first - kind and second - kind modified Bessel functions respectively.

- **Binding energy calculation**:
\[
E_b(y_1, y_2) = e_{10} - e_{12}(y_1, y_2)
\]
where \(e_{10}\) is the ground - state energy of the system without impurities, and \(e_{12}(y_1, y_2)\) is the ground - state energy of the system with impurities.

- **Binding energy in a magnetic field**:
\[
E_b(B) = E_b^{(0)} + \Delta E_b(B)
\]
where \(E_b^{(0)}\) is the binding energy without a magnetic field, and \(\Delta E_b(B)\) is the change of binding energy caused by the magnetic field.

### Conclusion

According to the research results, the author draws the following conclusions:

- The dielectric constant mismatch significantly affects the impurity binding energy, especially when the inhomogeneity of the system increases (such as the increase of alloy concentration or the decrease of dielectric constant).
- In the case of considering the dielectric constant mismatch, the binding energy in the size - quantized coated semiconductor wire is usually higher than that of the wire in an infinite environment.
- The applied magnetic field will increase the impurity binding energy, and the increasing speed will accelerate with the decrease of alloy concentration and dielectric constant.

In short, ignoring the dielectric constant mismatch of the system will lead to a large error in the calculation of binding energy, especially when the wire radius is small and the alloy concentration is high.