Abstract:The influence of the built-in electric field on the binding energy of a bound polaron and the polaron effect in a wurtzite ZnO/MgxZn1−xO quantum well are studied using the improved Lee-Low-Pines intermediate coupling method. The ground-state binding energy, the contributions from different branches of optical phonons to the energy and the binding energy are presented as the functions of well width, impurity position and composition. In the numerical calculations, the anisotropic properties of the frequencies of the different branches of optical phonons, electron effective mass, dielectric constant, the electron-optical phonon interaction and the impurity center-optical phonon interaction are considered. The results show that the built-in electric field has obvious influence on the energy, the binding energy and the polaron effect, and it affects the contributions of different phonon modes to the energy and the binding energy with different degrees. The built-in electric field significantly increases the total phonon contribution to the energy, but it reduces the total phonon contribution to the binding energy. The binding energy of the bound polaron with the built-in electric field is less than that without the built-in electric field, and it declines rapidly with increasing well width. Because of the built-in electric field effects, the contributions from different branches of phonons to the energy and the binding energy and the functions of binding energy with well width and impurity center position are different from the cases without the built-in electric field. The built-in electric field in the wurtzite ZnO/MgxZn1−xO quantum wells has a great impact on the binding energy and polaron effect, and the polaron effect in the wurtzite ZnO/MgxZn1−xO quantum wells is significantly greater than that in the zinc blende GaAs/AlxGa1−xAs QWs, hence, it is necessary to discuss the built-in electric field and polaron effect when considering the problem of electronic state in such systems.

Impurity Bound Polaron in A Magnetic Field in Quantum-Well Structures

Polaronic Effect on the Binding Energy of an Impurity with Varying Position in Parabolic Quantum Dots

Bound Polarons in Asymmetric Quantum Wells in an Electric Field

Polaronic Effect on a Bound Polaron

Energy of A Bound Polaron in A Magnetic Field in Asymmetric Polar Semiconductor Heterostructures

Impurity Bound Polaron in Wurtzite Gan/Aln Quantum Wells: the Interface Optical-Phonon and the Built-In Electric Field Effects

A New Variational Method for the Coupling System of Polaron in A Quantum Well

Ground State Description of Bound Polarons in Parabolic Quantum Wires

A Bound Polaron in A Spherical Quantum Dot with A Finite Confining Potential

Bound Magneto-Acoustic Polaron in an Asymmetric Gaussian Confinement Potential Quantum Well

Polaron Effects In Asymmetric Semiconductor Quantum-Well Structures

Energy and Effective Mass of a Polaron in Asymmetric Semiconductor Quantum Well Structures

BEC polaron in harmonic trap potential at weak coupling regime: Lee-Low-Pines type approach

A Polaron in A Quantum Dot Quantum Well

Exact Polaron-Polaron interactions in a Quantum Hall Fluid

Built-in electric field effect on donor impurities in strained wurtzite GaN/AlGaN asymmetric double quantum wells

The Influence of Built-in Electric Field on Binding Energy of Bound Polaron and Polaron Effects in Wurtzite ZnO/MgxZn1−xO Quantum Well

Polaron Properties of an Impurity in Bose-Einstein-Condensation

Polaronic dressing of bound states

Surface Polaronic Effect on Donor-Impurity States of a Wurtzite Nitride Nanowire: Two-parameter Variational Approach

Polariton propagation in weak confinement quantum wells