Bound Polarons in Asymmetric Quantum Wells in an Electric Field

ZX Liu,YG Weng,JJ Shi,ZJ Wang,SH Pan
DOI: https://doi.org/10.1088/1004-423x/7/1/004
1998-01-01
Abstract:We have proposed the Hamiltonian of a polaron bound to a donor impurity in semiconductor quantum wells (QWs) in the presence of an electric field. The couplings of an electron with the confined bulk-like longitudinal optical (LO) phonons, half-space LO phonons and interface phonons are considered. In particular, the interaction of the impurity with the various phonon modes is also included. We have calculated the ionization energy of a bound polaron in AlxlGa1-xlAs/GaAs/AlxrGa1-xrAs asymmetric and symmetric QWs. Results are obtained as a function of the barrier height (or equivalently of Al concentration x), the well width, the electric field intensities and the position of impurity in the QWs. Our numerical calculations show clearly that the interaction between the impurity and the phonon field plays an important role in screening the Coulomb interaction. It is shown that for a thin well (< 12nm), the cumulative effects of the electron-phonon coupling and the impurity-phonon coupling can contribute appreciably to the donor ionization energy and polarizability.
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