Abstract:Ultra-sensitive and selective moisture sensors are needed in various industries for processing control or environmental monitoring. As an outstanding sensor platform, surface-stress sensing microcantilevers have potential application in moisture detection. To enlarge the deflection of the microcantilever under surface stress induced by specific reactions, a new SiO 2 microcantilever is developed which features a much lower Young’s modulus than conventional Si or SiN x microcantilevers. For comparing SiO 2 cantilever with Si cantilevers, a model of the cantilever sensor is given by using both analysis and simulation, resulting in good agreement with the experimental data. The results demonstrate the SiO 2 cantilever can achieve a much higher sensitivity than the Si cantilever. In order to fabricate this device, a new fabrication process using isotropic combined with anisotropic dry etching to release the SiO 2 microcantilever beam by ICP (Inductively Coupled Plasma) was developed and investigated. This new process not only obtains a high etch rate at 9.1 μm/min, but also provides good profile controllability, and a flexibility of device design. Attributed to the high sensitivity, a significant deflection amplitude of the surface modified SiO 2 microcantilever was observed upon exposure to 1% relative humidity. The SiO 2 cantilevers are promising for inexpensive and highly sensitive moisture detection.

Measurements of Interface Stress of Silicon Dioxide in Contact with Water-Phenol Mixtures by Bending of Microcantilevers

Micromechanical Measurement of Active Sites on Silicon Nitride Using Surface Free Energy Variation

Micromachined SiO 2 microcantilever for high sensitive moisture sensor

Fabrication and Characterization of Sio2 Microcantilever for High Sensitive Moisture Sensor

Fabrication and characterization of SiO2 microcantilever for microsensor application

Detection of Ph Variation Using Modified Microcantilever Sensors

Fabrication of SiO $_{2}$ Microcantilever Using Isotropic Etching With ICP

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Sub-ambient Water Wettability of Hydrophilic and Hydrophobic SiO2 Surfaces.

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Surface Orientation and Temperature Effects on the Interaction of Silicon with Water: Molecular Dynamics Simulations Using ReaxFF Reactive Force Field.

Comparison of Measurements with Finite-Element Analysis of Silicon-Diaphragm-Based Fiber-Optic Fabry–Perot Temperature Sensors

Strain at Native ${\rm SiO}_{2}/{\rm Si}(111)$ Interface Characterized by Strain-Scanning Second-Harmonic Generation

Measurements of Residual Stresses in the Parylene C Film/Silicon Substrate Using A Microcantilever Beam

Micro-Raman spectroscopy measurement of stress in silicon

Direct Measurement of the Etching Rates on Si(111) and Silicon Dioxide Surfaces in 40% Ammonium Fluoride Aqueous Solution Via Atomic Force Microscopy

Measurements of Residual Stresses in Al Film/silicon Nitride Substrate Microcantilever Beam Systems

Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures

Chemisorption Sensing and Analysis Using Silicon Cantilever Sensor Based on N-Type Metal–oxide–semiconductor Transistor

Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technology

Measurement Of Thermal Conductivity Of Buried Oxides Of Silicon-On-Insulator Wafers Fabricated By Separation By Implantation Of Oxygen Technology