Abstract:Conventional silicon (Si)-based power devices face physical limitations-such as switching speed and energy efficiency-which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties-such as low ON-resistance and fast switching-and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems-for example, large lattice and thermal mismatches, as well as 'melt-back etching' at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

Gan-On-Silicon Integration Technology

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

(Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

III-V/Ge CMOS Device Technologies for High Performance Logic Applications

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

Algan/Gan Hemts On Si By Mbe With Regrown Contacts And F(T)=153 Ghz

Device and Integration Technologies of III-V/Ge Channel CMOS

High Mobility CMOS Technologies Using III-V/Ge Channels on Si Platform

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates

Monolithic Heterogeneous Integration of Si(100)/GaN CMOS Inverters and Normally-Off GaN Power Devices for High Switching Frequency and High Power Applications

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

GaN-based Power High-Electron-mobility Transistors on Si Substrates: from Materials to Devices

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

N-polar GaN Epitaxy and High Electron Mobility Transistors