Abstract:Silicon carbide nanowires (SiCNWs) have attracted increasing attention due to their excellent properties and wide range of potential applications. SiCNWs covered with oxide layer, which can be simply prepared by thermal oxidation, show a number of fascinating functional prospects. However, the oxidation mechanism of the SiCNWs is barely explored. Here we studied oxidation of SiCNWs at 300–1500 K by using the reactive molecular dynamics simulations with ReaxFF potential. The temperature-dependent oxidation processes and the obtained structures were discussed in detail. The results reveal that self-limiting oxidation of the SiCNWs can switch from the rate-determining step of chemical reaction at the interface to diffusion limited oxidation after a definite time. In addition, the SiC|C|SiOx core-shell structure was proved to be formed during the oxidation from a theoretical view. A saturation emit mechanism was proposed to explain why the C-rich layer is too thin to be detected. DFT calculations were employed to study electronic structure of the core-shell structures, indicating the SiO2 layer apparently narrows band gaps of the SiCNWs, and the accumulated C at the interface could offset conduction band and valence band, resulting in instability problem during application of the SiCNWs.

Cross-section control of stacked nanowires formed by Bosch process and oxidation.

Optimization of Bosch Etch Process for Vertically Stacked Si Nanowires

Top-Down Fabrication of Shape Controllable Si Nanowires Based on Conventional Cmos Process

Two-Dimensional Self-Limiting Wet Oxidation of Silicon Nanowires: Experiments and Modeling

Fabrication of Vertically Stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation

TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing

Two-Dimensional Self-Limiting Oxidation for Non-Planar Silicon Nano-Devices from Top-Down Approach: Experiments and Modeling

Study on Thermal Oxidation of Si Nanowires

Facile 3D Integration of Si Nanowires on Bosch-etched Sidewalls for Stacked Channel Transistors

Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires

Modeling of stress-retarded orientation-dependent oxidation: shape engineering of silicon nanowire channels

Synthesis of orthogonally assembled 3D cross-stacked metal oxide semiconducting nanowires

Fabrication of Silicon Nano-Wire by Oxidation

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Fabricating Vertically Aligned Sub-20 Nm Si Nanowire Arrays by Chemical Etching and Thermal Oxidation

Vertically Stacked Silicon Nanowire Transistors Fabricated by Inductive Plasma Etching and Stress-Limited Oxidation

Advanced morphological control over Cu nanowires through a design of experiments approach

Modeling of Stress-Retarded Thermal Oxidation of Nonplanar Silicon Structures for Realization of Nanoscale Devices

Oxidation simulation study of silicon carbide nanowires: A carbon-rich interface state

Realization of Silicon Quantum Wires by Selective Chemical Etching and Thermal Oxidation

3-D matrix nano-wire transistor fabrication on silicon substrate