Abstract:In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release process of NS channels was firstly optimized to achieve uniform device structures. An over 100:1 selective wet-etch ratio of GeSi to Si layer was achieved for GeSi/Si stacks samples with different GeSi thickness (5 nm, 10 nm, and 20 nm) or annealing temperatures (≤900 °C). Furthermore, the influence of ground-plane (GP) doping in Si sub-fin region to improve electrical characteristics of devices was carefully investigated by experiment and simulations. The subthreshold characteristics of n-type devices were greatly improved with the increase of GP doping doses. However, the p-type devices initially were improved and then deteriorated with the increase of GP doping doses, and they demonstrated the best electrical characteristics with the GP doping concentrations of about 1 × 1018 cm−3, which was also confirmed by technical computer aided design (TCAD) simulation results. Finally, 4 stacked GAA Si NS channels with 6 nm in thickness and 30 nm in width were firstly fabricated on bulk substrate, and the performance of the stacked GAA Si NS devices achieved a larger ION/IOFF ratio (3.15 × 105) and smaller values of Subthreshold swings (SSs) (71.2 (N)/78.7 (P) mV/dec) and drain-induced barrier lowering (DIBLs) (9 (N)/22 (P) mV/V) by the optimization of suppression of parasitic channels and device’s structure.

Optimization of Bosch Etch Process for Vertically Stacked Si Nanowires

Fabrication of Vertically Stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation

Cross-section control of stacked nanowires formed by Bosch process and oxidation.

Facile 3D Integration of Si Nanowires on Bosch-etched Sidewalls for Stacked Channel Transistors

Fabricating Vertically Aligned Sub-20 Nm Si Nanowire Arrays by Chemical Etching and Thermal Oxidation

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves

Vertically Stacked Silicon Nanowire Transistors Fabricated by Inductive Plasma Etching and Stress-Limited Oxidation

Ultra-Confined Catalytic Growth Integration of Sub-10 Nm 3D Stacked Silicon Nanowires Via a Self-Delimited Droplet Formation Strategy.

Tiny silicon nano-wires synthesis on silicon wafers

A Fabrication Method for Realizing Vertically Aligned Silicon Nanowires Featuring Precise Dimension Control

In Situ Nanoscale Refinement by Highly Controllable Etching of the (111) Silicon Crystal Plane and Its Influence on the Enhanced Electrical Property of A Silicon Nanowire

Optimization of nanoscale silicon waveguide fabrication

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Dispersion, Refinement, and Manipulation of Single Silicon Nanowires

Top-Down Fabrication of Shape Controllable Si Nanowires Based on Conventional Cmos Process

Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire

Electric Double Layer Effect in a Nano-Scale SiO2sacrificial Layer Etching Process and Its Application in Nanowire Fabrication

3-D matrix nano-wire transistor fabrication on silicon substrate

Two-Dimensional Self-Limiting Wet Oxidation of Silicon Nanowires: Experiments and Modeling

Design Optimization and Antireflection of Silicon Nanowire Arrays Fabricated by Au-assisted Chemical Etching