Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Static and Dynamic Performance Characterization and Comparison of 15 Kv Sic Mosfet and 15 Kv Sic N-Igbts

ZVS range extension of 10A 15kV SiC MOSFET based 20kW Dual Active Half Bridge (DHB) DC-DC converter

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Comparative Study on Reliability and Application Features of SiC MOSFET

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Characterization, Modeling, and Application of 10-kV SiC MOSFET

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

Sic Mosfet Zero-Voltage-Switching Svm Controlled Three-Phase Grid Inverter

A Study of Dynamic High Voltage Output Charge Measurement for 15 Kv SiC MOSFET

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Comparisons of 6.5kv 25A Si IGBT and 10-Kv SiC MOSFET in Solid-State Transformer Application

High efficiency power factor correction power supply based on SiC device

10 Kv SiC MOSFET Based Boost Converter

Comparisons of SiC and Si devices for PMSM drives

Simulation on SiC Based Three Phase Boost Power Factor Correction Rectifier Using MATLAB PLECS Model and Its Numerical Analysis Verification

Comparison Of 10-Kv Sic Power Devices In Solid-State Transformer

Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions

Dynamic Performance Of 4h-Sic Power Mosfets And Si Igbts Over Wide Temperature Range