Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer

Gate-first Process Compatible, High-Quality in Situ SiNx for Surface Passivation and Gate Dielectrics in AlGaN/GaN MISHEMTs

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT

Investigation of the Interface Between LPCVD-SiNx Gate Dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by Using In-Situ MOCVD-SiNx As an Interface Sacrificial Layer

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiNx Passivation

Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiN x Passivation

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Study of Surface Passivation with Different a-SiNBxB:H Films Effect on AlGaN/GaN HEMTs

Effective Suppression of Deep Interface States and Dielectric Trapping in SiNx/GaN Metal-Insulator-semiconductor Structures by a SiOxNy Interfacial Layer Grown by Plasma-Enhanced Atomic Layer Deposition

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

A Novel Si-rich SiN Bilayer Passivation with Thin-Barrier AlGaN/GaN HEMTs for High Performance Millimeter-Wave Applications

PEALDInvestigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Normally OFF GaN-on-Si MIS-HEMTs Fabricated with LPCVD-SiN X Passivation and High-Temperature Gate Recess