Abstract:Passivating trap defects and controlling carrier concentration and doping profiles in the functional dielectric and channel layers is a prerequisite for designing high performance electronic devices. Here, we investigate the effects of dielectric interface trap passivation and graded channel modulation doping on the electrical performance of InGaZnO thin-film transistors (TFTs). The introduction of ultrathin Al2O3 passivation layers up to 2 nm in thickness sandwiched between HfO2 thin films allows efficient suppression of hysteresis in InGaZnO TFTs. IGZO TFTs with graded channel doping profiles were constructed by consecutive modulation of oxygen partial pressure without growth interruption. Enhancement-mode InGaZnO TFTs with high performance are fabricated by limiting the depth of the high carrier concentration gradient InGaZnO films to as thin as only a few angstroms. The graded channel structure InGaZnO TFTs shows consistently excellent characteristics including a large saturation mobility of 112.8 cm(2) V-1 s(-1), small subthreshold swing of 82.6 mV dec(-1), low threshold voltage of 0.28 V, and high on/off current ratios >2.0 x 10(9), which are comparable to those of the commercial lowtemperature poly-silicon TFTs. Most importantly, the as-fabricated InGaZnO TFTs show robust current controlling capacities for high-power light emitting diode arrays. This work represents a major step toward the development of high-performance oxide electronics.

Electrical Properties in Group IV Elements-Doped ZnO Thin-Film Transistors

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Influence of Ga Doping on Electrical Performance and Stability of ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor

Tunable Electrical Properties in High-Valent Transition-Metal-Doped ZnO Thin-Film Transistors

High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

Properties of Al-doped ZnO film transistors with different source and drain electrodes

Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering

Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

Preparation and Electrical Characteristics of N-doped In-Zn-Sn-O Thin Film Transistors by Radio Frequency Magnetron Sputtering

Effect of Al Doping on Performance of ZnO Thin Film Transistors

Transparent Conductivity Modulation of ZnO by Group-Iva Doping

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Atomic Layer Deposition Deposited High Dielectric Constant (κ) ZrAlOx Gate Insulator Enabling High Performance ZnSnO Thin Film Transistors

Investigation of High-Performance ITO-Stabilized ZnO TFTs with Hybrid-Phase Microstructural Channels

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Fabrication and electrical characterization of Li–N dual doped ZnO thin film transistor

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution