Abstract:The functionality of phase change memory (PCM) as a promising non-volatile memory (NVM) is realized by changing the material properties of phase change (PC) material in a near-bottom-electrode region called 'active region'. The shape of the active region is usually assumed to be hemispheric as demonstrated by [1][2], based on which some work have been done to calculate the radius for further design optimization [3][4]. However the hemispheric assumption is only valid when the phase change element (PCE) layer, has large enough dimension to satisfy the requirement of semiinfinite thermal conductive medium used to calculate the heat generation [3]. And the dimension of the PCE layer might be small in actual design, in order to reduce the total phase change volume, which will invalidate the hemisphere assumption due to the finite geometry boundary of PCE layer [5]. So far very few work has been reported to include this situation for the calculation although the necessity is evident to develop a more general model to improve the universality of preceding work in 3-D resistance calculation, where active dimension is an indispensable element [6]. For this purpose an analytical model is proposed for active dimension calculation by solving 3-D heat conduction equation in this work, which is applicable to varying cell geometries including the situation without semi-infinite assumption. © 2015 IEEE.

Critical Parasitic Capacitance in Nano-Scale Phase-Change Memory (PCM) Cell

Modeling and Test for Parasitic Resistance and Capacitance Defects in PCM

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Parasitic Capacitance Effect on Programming Performance of Phase Change Random Access Memory Devices

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

Impacts of Parasitic Effects on PCM-based Neuromorphic Circuits Under Advanced Technology Nodes

Contact Size Scaling Of A W-Contact Phase-Change Memory Cell Based On Numerical Simulation

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

A Phase Change Memory SPICE Model Adaptable to Different Device Geometry

A compact model for phase change memory based on carrier transport mechanism

A Compact Phase Change Memory Model With Dynamic State Variables

A review of compact modeling for phase change memory

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Simulation of Retention Behavior for the Phase Change Memory

Achieving Multiple Resistance States in Phase-Change Memory Cell

Modeling active dimension for phase change memory cell