Abstract:Electrothermal investigation on vertically aligned single-walled carbon nanotube (SWCNT) contacted phase-change memory (PCM) array is performed using the 3-D time-domain finite-element method. The in-house-developed algorithm is verified by comparing the simulated results with the experimental ones published by others. Thermal coupling between adjacent cells, which may cause current leakage and reliability degradation, is characterized for PCMs with different geometrical parameters, which could be caused by fabrication variation. It is shown that spacing variation between adjacent PCM cells draws a slight effect on their thermal coupling. However, thermal boundary resistance of the phase-change material-oxide interface and SWCNT diameter affect temperature rise and thermal coupling significantly. On the other hand, it is indicated that the SWCNT contacted PCM has microampere-scale programming current and nanosecond-scale thermal response time, which make it vulnerable to electrostatic discharge (ESD). Electrothermal responses to ESD are captured and compared, which show that unintentional ESD can change the state of PCM and result in error programming.

Modeling and Test for Parasitic Resistance and Capacitance Defects in PCM

Critical Parasitic Capacitance in Nano-Scale Phase-Change Memory (PCM) Cell

The Parasitic Capacitance's Influence on Noise in a MEMS Accelerometer Sensor

SPICE MODELING OF PHASE-CHANGE RESISTANCE IN PCM

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

A Phase Change Memory SPICE Model Adaptable to Different Device Geometry

An Improved SPICE Model of Phase-Change Memory (PCM) for Peripheral Circuits Simulation and Design

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

A Snake Addressing Scheme for Phase Change Memory Testing

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

A Compact Phase Change Memory Model With Dynamic State Variables

Modelling of Dual-Port Computing Operations of a Phase-Change Memory Cell

Parasitic Capacitance Effect on Programming Performance of Phase Change Random Access Memory Devices

Impacts of Parasitic Effects on PCM-based Neuromorphic Circuits Under Advanced Technology Nodes

A review of compact modeling for phase change memory

Compact Modeling of Phase Change Memory with Parameter Extractions

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect

Simulation of Retention Behavior for the Phase Change Memory

A compact model of diode array for Phase Change Memory