Abstract:Top Row: (d) TEM micrograph of the TaOx‐based ReRAM element with the TiN electrodes, TaOx switching and Ta oxygen exchange layer. (e) EDX 2D scan of ReRAM stack and V0 layer. Bottom Plots: Measured and the predicted I–V curves of the TaOx memristor device for various NMOS gate voltages (Vg) and electrical conductivity of conducting filament. Memristors, non‐volatile switching memory platform, has recently attracted significant interest, offering unique potential to enable the realization of human brain‐like neuromorphic computing efficiency. Memristors also demonstrate excellent temperature tolerance, long‐term durability, and high tunability with nanosecond pulses, making them highly attractive for neuromorphic computing applications. To better understand the material processing, microstructure, and property relationship of switching mechanisms in memristor devices, computational methodologies, and tools are developed to predict the I–V characteristics of memristor devices based on tantalum oxide (TaOx) resistive random‐access memory (ReRAM) integrated with an n‐channel metal–oxide–semiconductor (NMOS) transistor. A multiphysics model based on coupled partial differential equations for electrical and thermal transport phenomena is solved for the high‐ and low‐resistance states during the formation, growth, and destruction of a conducting filament through SET and RESET stages. These stages effectively represent the migration of oxygen vacancies within an oxide exchange layer. A series of parametric studies and energy minimization calculations are conducted to determine probable ranges for key material and model parameters accounting for the experimental data. The computational model successfully predicted the measured I–V curves across various gate voltages applied to the NMOS transistor in the one transistor one resistance (1T1R) configuration.

Consideration of Conductive Filament for Realization of Low-Current and Highly-Reliable TaOx ReRAM

Comprehensive understanding of conductive filament characteristics and retention properties for highly reliable ReRAM

Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation

Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM

Position detection and observation of a conducting filament hidden under a top electrode in a Ta₂O₅-based atomic switch.

First-principles Investigation of the Conductive Filament Configuration in Rutile TiO2-x ReRAM

Dynamic Moderation of an Electric Field Using a SiO2 Switching Layer in TaOx ‐based ReRAM

Visualization of conductive filaments in TaO x -based ReRAM devices and investigation of their evolution during cycling by EBIC

Thin TiOx Layer As a Voltage Divider Layer Located at the Quasi-Ohmic Junction in the Pt/Ta2O5/Ta Resistance Switching Memory.

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

In-Situ TEM Observation of Resistive Switching Behaviors by in Nonvolatile Memory

Ultralow Power Switching of Ta2O5/AlOXbilayer Synergistic Resistive Random Access Memory

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5 -based ReRAM devices.

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM

Improved Uniformity of TaOx-Based Resistive Random Access Memory with Ultralow Operating Voltage by Electrodes Engineering

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in Bipolar-ReRAM