Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation

Comprehensive understanding of conductive filament characteristics and retention properties for highly reliable ReRAM

Consideration of Conductive Filament for Realization of Low-Current and Highly-Reliable TaOx ReRAM

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in Bipolar-ReRAM

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Dynamic Moderation of an Electric Field Using a SiO2 Switching Layer in TaOx ‐based ReRAM

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Novel bipolar TaOx-based Resistive Random Access Memory

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Retention-failure Mechanism of TaN∕CuxO∕Cu Resistive Memory with Good Data Retention Capability

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory with Single Filament Formation

Visualization of conductive filaments in TaO x -based ReRAM devices and investigation of their evolution during cycling by EBIC

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Retention Model for High-Density ReRAM

First-principles Investigation of the Conductive Filament Configuration in Rutile TiO2-x ReRAM

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Confirmation Of Filament Dissolution Behavior By Analyzing Electrical Field Effect During Reset Process In Oxide-Based Rram

Uniform 3d Vertical Alo Delta/Ta2o5-X/Taoy Rram: Fabrication, Characterization And Mechanism Analysis

Forming-Less Unipolar Taox-Based Rram with Large Cc-Independence Range for High Density Memory Applications