Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

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Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Oxygen Migration Induced Resistive Switching Effect And Its Thermal Stability In W/Taox/Pt Structure

Different Interface Role in Cuox Based Rram

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Electrical and testing reliability of CuxO based RRAM

Oxide-based RRAM: Physical based retention projection

Stable Self-Compliance Resistive Switching in AlOδ/Ta2O5−x/TaOytriple Layer Devices

Highly Uniform Resistive Switching Characteristics of Tin/Zro2/Pt Memory Devices

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Bistable Resistance Switching of Cu/Cu: HfO2/Pt for Nonvolatile Memory Application

Characteristics and Mechanism of Conduction/set Process in TiN∕ZnO∕Pt Resistance Switching Random-Access Memories