Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

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Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

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Oxide-based RRAM: Physical based retention projection

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

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Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

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A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and Excellent Thermal Stability

Spectromicroscopic Insights for Rational Design of Redox-Based Memristive Devices

Investigation of Forming Free Bipolar Resistive Switching Characteristics in Al/Mn3O4/FTO RRAM Device

Investigation of resistive switching behaviours in WO3-based RRAM devices

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Methodology for Stability Evaluation on the Multi-Level Storages of Oxide-Based Conductive Bridge Ram (Cbram)

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

Study on High-Resistance State Instability of TaOx-Based RRAM

Stable Self-Compliance Resistive Switching in AlOδ/Ta2O5−x/TaOytriple Layer Devices

Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology