Abstract:In this paper, the metal‐assisted chemical etching (MACE) method is presented along with the advantages of using this method. Large areas and a combination of large and narrow patterning areas are successfully produced by using metal meshes for MACE. Moreover, in order to exemplify this microfabrication technique, the authors demonstrate the fabrications of different microelectromechanical systems (MEMS) devices; from simple structure (micro‐cantilever) to a complex structure (capacitive silicon resonator). Micro‐cantilever beam with resonant frequency of 262 kHz and quality factor of 8100 is successfully fabricated using this technique. Narrow capacitive gap width together with silicon resonator structure is also microprocessed by MACE technique. For the capacitive resonator, nano gaps with 250 nm‐width and 7 μm‐height is successfully micro‐fabricated using MACE process on a silicon on insulator (SOI) wafer. The resonant peak of the fabricated device is found at 81.4 MHz with quality factor of 4000 and motional resistance of 89 kΩ. The MACE process is performed in the wet etching solution that enables the fabrication of anisotropic silicon structures. This paper demonstrates that MACE method could potentially replace dry etching technique currently used for the fabrication of various electronics and photonics devices and energy applications. Due to the ease of implementation and possibility of batch fabrication, MACE method is a promising technique for the manufacturing of a broad range of high‐quality Si‐based devices at low cost.

Low-cost Micrometer-Scale Silicon Vias (svs) Fabrication by Metal-Assisted Chemical Etching (mace) and Carbon Nanotubes (cnts) Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Wetting Process of Copper Filling in Through Silicon Vias

Silicon Vias Fabricatied by Metal-Assisted Chemical Etching

Low Cost and High‐Aspect Ratio Micro/Nano Device Fabrication by Using Innovative Metal‐Assisted Chemical Etching Method

Integrating Vertically Aligned Carbon Nanotubes on Micromechanical Structures

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts.

A Novel Seedless TSV Process Based on Room Temperature Curing Silver Nanowires ECAs for MEMS Packaging

A wet process to etch arrayed vias for through silicon via application of 3D packaging

Filling Technique Of Through Silicon Via By Co-Depositing Copper And Sic Nano-Particles

Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Simple and Cost-Effective Fabrication of Two-Dimensional Plastic Nanochannels from Silica Nanowire Templates

Improved Metal Assisted Chemical Etching Method for Uniform, Vertical and Deep Silicon Structure

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Study of a through-silicon/substrate via filling method based on the combinative effect of capillary action and liquid bridge rupture

Carbon nanotube growth for through silicon via application

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Structure Design Of Through Silicon Via Interconnects And Growth Of Carbon Nanotubes