Abstract:The first-principles calculations have recently shown that implanting sufficient noble gas atoms into germanium (Ge) can expand its lattice to achieve the desired tensile strain for indirect-to-direct bandgap transition to develop the on-chip high-efficient light emitter. Here, to experimentally prove this strain-doping concept, we implant argon (Ar) ions into Ge and then recrystallize the Ar-doped amorphous Ge (a-Ge) layer using nanosecond laser annealing (NLA) and furnace thermal annealing (FTA), respectively. The NLA effectively recrystallizes the 12 nm thick a-Ge layer with minimal loss of Ar dopants, while FTA fails to fully recrystallize it and results in significant loss of Ar dopants. The regrown Ge layer with Ar concentration above the critical value (0.8%) for bandgap transition is 3.8 nm thick, making it a challenge to distinguish the photoluminescence signal of strain-doped layer from the substrate. To overcome this, increasing the implantation energy and adding a capping layer may be necessary to further prevent Ar loss and achieve a strain-doped layer with sufficient depth. These findings provide promising view of the strain-doping concept for direct-bandgap emission from Ge.

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Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGe

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Fermi Level Effect on Strain of Si Doped Gan

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A Self-Consistent Numerical Approach for Characterizing the Band Structures and Gain Spectrum of Tensile-Strained and N(+)-Doped Ge/GeSi Quantum Wells

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Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

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