Abstract:Oxide breakdown has become an increasingly pressing reliability issue in modern very large scale integration design with ultrathin oxides. The conventional guard-band methodology assumes uniformly thin oxide thickness, resulting in overly pessimistic reliability estimation that severely degrades system performance. In this paper, we present the use of limited post-fabrication measurements of oxide thicknesses from on-chip sensors to aid in the chip-level oxide breakdown reliability management. A key challenge, which is the focus of this paper, is precisely predicting and managing the reliability condition of each chip with a limited number of measurements and quantifying the tradeoff between reliability margin and system performance. Given the post-fabrication measurements, chip oxide breakdown reliability can be formulated as a conditional distribution that allows one to achieve a significantly more accurate chip lifetime estimation. The estimation is then used to individually tune the supply voltage of each chip for performance maximization while maintaining or improving the reliability. Experimental results show that, by using 25 measurements, the proposed method can achieve an average of 19% performance improvement, and a 27% maximum for a design with up to 50 million devices, with an average operation time of approximately 0.4 s per chip.

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Defect loss and its physical processes

New Insights Into Defect Loss, Slowdown, and Device Lifetime Enhancement

Defect Losses under Different Processes, Stress, Recovery, and Anneal Conditions

Sensor-Driven Reliability and Wearout Management

Improvement of Thermal and Mechanical Reliability of a LDMOS FET Using Graphene

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

A Statistical Framework for Post-Fabrication Oxide Breakdown Reliability Prediction and Management

Fluorine IMP effect on negative bias temperature instability and process induced defects

Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Defects and Lifetime Prediction for Ge Pmosfets under Ac Nbti Stresses

Interconnection Reliability on FinFET Devices

Defects, Fault Modeling, and Test Development Framework for FeFETs

Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation

Recent Progress in Understanding the Instability and Defects in Gate Dielectrics

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance

Oxide Breakdown Reliability of SiC MOSFET

Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs

Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization