Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs

Luca Panarella,Stanislav Tyaginov,Ben Kaczer,Quentin Smets,Devin Verreck,Alexander Makarov,Tom Schram,Dennis Lin,César Javier Lockhart de la Rosa,Gouri S Kar,Valeri Afanas'ev
DOI: https://doi.org/10.1021/acsami.4c10888
IF: 9.5
2024-10-29
ACS Applied Materials & Interfaces
Abstract:In this work, a self-consistent method is used to identify and describe defects plaguing 300 mm integrated 2D field-effect transistors. This method requires measurements of the transfer characteristic hysteresis combined with physics-based modeling of charge carrier capture and emission processes using technology computer aided design (TCAD) tools. The interconnection of experiments and simulations allows one to thoroughly characterize charge trapping/detrapping by/from defects, depending on...
materials science, multidisciplinary,nanoscience & nanotechnology
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