Abstract:A typical magnetic tunnel junction (MTJ) consists of a thin insulating layer (a tunnel barrier), sandwiched by two ferromagnetic electrode layers. When the relative magnetic configuration of both ferromagnetic electrode layers changes from parallel state to anti-parallel state with external magnetic field, the resistance of MTJ would become high from low, exhibiting tunnel magneto-resistance (TMR) due to spin-dependent electron tunnelling. Amorphous AlOx barrier MTJs were extensively studied and have been used in magneto-resistance random access memory (MRAM) and read heads of hard disk drives, since the discovery of room-temperature TMR in 1995. However, the spin electronic devices development of the next-generation high-speed, low-power-consumption and high-performance need much higher TMR ratio and a novel structure. In 2001, the first-principle calculation predicted that the TMR ratio of epitaxial Fe (001)/MgO (001)/Fe (001) MTJs would be over 1 000%, due to spin filter effect of MgO barrier for different symmetry spin polarized electron. In 2004 TMR ratios of about 200% were obtained in MTJs with a single-crystal MgO (001) barrier or a textured MgO (001) barrier. In 2008, the TMR ratio of 604% has been reported in pseudo-spin-valve MTJs with core structure of CoFeB/MgO/CoFeB. Recently, Quantum well (QW) resonances tunneling and spin-dependent Coulomb blockade magneto-resistance (CBMR) effect in MgO-barrier MTJs were proposed and demonstrated in theories and experiments. Magnetic sensors, MRAM, spin nano-oscillator and microwave detector based on MTJs have attracted attention of electron science and devices. In the paper we briefly introduced the investigation and development of magnetic tunnel junction material and its device applications.

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Interfacial Perpendicular Magnetic Anisotropy in Sub-20 Nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory

High-performance Type-y Spin-orbit Torque MRAM Devices

Thermal Stable and Fast Perpendicular Shape Anisotropy Magnetic Tunnel Junction

Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

Compact Modeling of High Spin Transfer Torque Efficiency Double-Barrier Magnetic Tunnel Junction.

Fabrication of Magnetic Random Access Memory Based on Nanoring-Type Magnetic Tunnel Junctions and Spin-Polarized Current Driving

Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

Computational Study for Spin-orbit Torque Magnetic Random Access Memory

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Electrical Modeling of Stochastic Spin Transfer Torque Writing in Magnetic Tunnel Junctions for Memory and Logic Applications

Design Considerations and Strategies for High-Reliable STT-MRAM

Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

Compact Modeling of Perpendicular-Magnetic-Anisotropy Double-Barrier Magnetic Tunnel Junction with Enhanced Thermal Stability Recording Structure

Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses.

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

A Typical Magnetic Tunnel Junction Material and Effects of Tunnel Magneto-Resistance

Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

Strain Engineered Magnetic Tunnel Junctions and Spin-Orbit Torque Switching