Abstract:In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets—a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity. Parallel to this examination, our investigation of the interface exchange coupling within multilayer structures unveils critical insights into the efficacy and dependability of spintronic devices. We particularly scrutinize how exchange coupling, mediated by non-magnetic layers, influences the magnetic interplay between adjacent ferromagnetic layers, thereby affecting their magnetic stability and domain wall movements. This investigation is crucial for understanding the switching behavior in multi-layered structures. Our integrated methodology, which uses both charge and spin currents, demonstrates a comprehensive understanding of MRAM dynamics. It emphasizes the strategic optimization of exchange coupling to improve the performance of multi-layered spintronic devices. Such enhancements are anticipated to encourage improvements in data retention and the write/read speeds of memory devices. This research, thus, marks a significant leap forward in the refinement of high-capacity, high-performance memory technologies.

Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses.

Compact Model of Subvolume MTJ and Its Design Application at Nanoscale Technology Nodes

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

A macro model of spin-transfer torque magnetic tunnel junction

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Field-free reliable magnetization switching in a three-terminal perpendicular magnetic tunnel junction via spin-orbit torque, spin-transfer torque, and voltage-controlled magnetic anisotropy

Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

Switching Current Dispersion in Magnetic Memory Bits Due to Inhomogeneity of Perpendicular Anisotropy

Reliability Emphasized MTJ/CMOS Hybrid Circuit Towards Ultra-Low Power.

Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics

Energy Efficient Stochastic Signal Manipulation in Superparamagnetic Tunnel Junctions via Voltage-Controlled Exchange Coupling

Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM

Modeling Methodology for Thermal Stability Factor in Spin Transfer Torque Magneto-Resistive Random Access Memories

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Stochastic p-Bits Based on Spin-Orbit Torque Magnetic Tunnel Junctions

Multi-scale modelling of current-induced switching in magnetic tunnel junctions using ab initio spin transfer torques

Magnetization dynamics at finite temperature in CoFeB-MgO based MTJs