Abstract:In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets—a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity. Parallel to this examination, our investigation of the interface exchange coupling within multilayer structures unveils critical insights into the efficacy and dependability of spintronic devices. We particularly scrutinize how exchange coupling, mediated by non-magnetic layers, influences the magnetic interplay between adjacent ferromagnetic layers, thereby affecting their magnetic stability and domain wall movements. This investigation is crucial for understanding the switching behavior in multi-layered structures. Our integrated methodology, which uses both charge and spin currents, demonstrates a comprehensive understanding of MRAM dynamics. It emphasizes the strategic optimization of exchange coupling to improve the performance of multi-layered spintronic devices. Such enhancements are anticipated to encourage improvements in data retention and the write/read speeds of memory devices. This research, thus, marks a significant leap forward in the refinement of high-capacity, high-performance memory technologies.

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

Variability Study of Toggle Spin Torques Magnetic Random Access Memory

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Design Considerations and Strategies for High-Reliable STT-MRAM

Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

Self-Enabled "Error-Free" Switching Circuit For Spin Transfer Torque Mram And Logic

Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache

Simulation study on the information storage mechanism of STT-MRAM

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

RAM and TCAM Designs by Using STT-MRAM

A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Failure and reliability analysis of STT-MRAM.

Low Current Writing Perpendicular Magnetic Random Access Memory with High Thermal Stability

Design of the writing circuit with a low supply voltage for the spin-transfer torque random access memory

Quantitative Evaluation of Reliability and Performance for STT-MRAM

A Low-power High-reliability STT-MRAM Write Scheme with Real-time Voltage Sensing Module