Abstract:In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets—a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity. Parallel to this examination, our investigation of the interface exchange coupling within multilayer structures unveils critical insights into the efficacy and dependability of spintronic devices. We particularly scrutinize how exchange coupling, mediated by non-magnetic layers, influences the magnetic interplay between adjacent ferromagnetic layers, thereby affecting their magnetic stability and domain wall movements. This investigation is crucial for understanding the switching behavior in multi-layered structures. Our integrated methodology, which uses both charge and spin currents, demonstrates a comprehensive understanding of MRAM dynamics. It emphasizes the strategic optimization of exchange coupling to improve the performance of multi-layered spintronic devices. Such enhancements are anticipated to encourage improvements in data retention and the write/read speeds of memory devices. This research, thus, marks a significant leap forward in the refinement of high-capacity, high-performance memory technologies.

Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

Thermoelectric Spin-Transfer Torque MRAM with Sub-Nanosecond Bi-Directional Writing using Magnonic Current

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Self-Enabled "Error-Free" Switching Circuit For Spin Transfer Torque Mram And Logic

Spin-Transfer-Torque MRAM: the Next Revolution in Memory

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

High Density Spin-Transfer Torque (STT)-MRAM Based on Cross-Point Architecture

A Novel STT-MRAM Design with Electric-Field-Assisted Synthetic Anti-Ferromagnetic Free Layer

Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories.

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

A High-Speed and Power-Efficient Gradient-Pulse Injection Method for Spin-Transfer Torque Magnetic Random-Access Memory

A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.

Thermal Stable and Fast Perpendicular Shape Anisotropy Magnetic Tunnel Junction

Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications