Abstract:The emerging spin transfer torque magnetic random access memory (STT-MRAM) promises many attractive features, such as nonvolatile, high speed and low power etc, which enable it to be a promising candidate for the next-generation logic and memory circuits. However with the continuous scaling technology process, the chip yield and reliability of STT-MRAM face severe challenges due to the increasing permanent and transient faults. Due to the intrinsic fault features and the targeted application requirements of STT-MRAM, traditional fault tolerant design solutions, such as error correction code (ECC), redundancy repair (RR), and fault masking (FM) techniques, cannot be employed straightforwardly for STT-MRAM. In this paper, we propose a synergistic technique framework, named sECC, that integrates both the ECC and FM techniques to address simultaneously the permanent and transient faults. With such approach, permanent faults are masked while transient faults are corrected with the same codeword. Moreover taking into consideration the fact that most permanent faults are sparse [about 60%-70% single isolated faults (SIFs)], we propose further integrating the RR and sECC (named iRRsECC) to optimize the system performance. In this scenario, all the SIFs are masked and the transient faults are corrected with the proposed sECC, while other permanent faulty types (e.g., faulty rows or columns) are repaired with redundant rows or columns. A simulation tool is developed to evaluate the proposed techniques and the evaluation results show their good performance in terms of repair rate and hardware overhead.

Design Considerations and Strategies for High-Reliable STT-MRAM

Failure and reliability analysis of STT-MRAM.

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Quantitative Evaluation of Reliability and Performance for STT-MRAM

Enhancing the Reliability of STT-RAM Through Circuit and System Level Techniques

Channel Modeling and Reliability Enhancement Design Techniques for STT-MRAM

Design and Analysis of Radiation Hardened Sensing Circuits for Spin Transfer Torque Magnetic Memory and Logic

Read disturbance issue and design techniques for nanoscale STT-MRAM.

Variability Study of Toggle Spin Torques Magnetic Random Access Memory

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.

Addressing the Thermal Issues of STT-MRAM from Compact Modeling to Design Techniques

Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM

A High-reliability Reading Scheme for STT-MRAM with a Symmetric Dual-reference Sensing Amplifier

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Reconfigurable Codesign of Stt-Mram under Process Variations in Deeply Scaled Technology

RAM and TCAM Designs by Using STT-MRAM

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Readability Challenges in Deeply Scaled STT-MRAM

Design And Analysis Of The Reference Cells For Stt-Mram