A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.
Jinkai Wang,Chenyu Lian,Yining Bai,Guanda Wang,Zhizhong Zhang,Zhenyi Zheng,Lei Chen,Kelian Lin,Kun Zhang,Youguang Zhang,Xiulong Wu,Sorin Cotofana,Yue Zhang
DOI: https://doi.org/10.1109/tcsi.2020.3020137
2020-01-01
Abstract:While spintronic memories, for example, spin transfer torque magnetic random access memory (STT-MRAM), have shown huge potential for building next-generation memory due to their attractive characteristics, the relatively large write latency and deficient read mechanism preclude their further application for emerging concepts, such as in-memory-processing and neuromorphic computing. A toggle spin torque (TST) MRAM combining STT and spin orbit torque (SOT) has recently been proposed to alleviate the write issue. However, the sensing featuring a good balance between the reliability and speed has not been addressed. In this paper, we propose a self-matching complementary-reference (SMCR) sensing scheme, which provides not only a maximum sensing margin (SM) but also a high-speed read operation. Through applying it in the TSTMRAM, advantageous performance in terms of both write and read processes can be realized. To validate the functionality of our proposal, we design and evaluate an 8Kb TST-MRAM array, in which a read delay of 1 ns and a read bit error rate (BER) of 1.02 × 10 -13 are achieved. Moreover, when being operated at 0.8 V supply voltage, it can reduce the read access energy by 7.5% and 20%, compared with conventional voltage sensing and dynamic reference sensing schemes, respectively.