Abstract:As an important nonvolatile memory technology, spin transfer torque magnetoresistive RAM (STT-MRAM) is widely considered as a universal memory solution for future processors. Employing STT-MRAM as the main memory offers a wide variety of benefits, but also results in unique design challenges. In particular, read disturbance characterizes accidental data corruption in STT-MRAM after it is read, leading to the need of restoring data back to memory after each read operation. In this paper, we propose both device and architecture innovations to mitigate and tolerate read disturbance. First, we quantitatively demonstrate the relationship between read disturbance and key device parameters, conducting a number of read disturbance mitigation schemes. These device-level schemes turn out to be effective in reducing the read disturbance probability, but come with costs on other design metrics. Consequently, we further propose a restore-aware memory controller design at the architecture level to tolerate read disturbance. Since the extra restores incurred by read disturbance greatly change the timing scenarios that conventional memory controllers were optimized for, directly adopting restore-agnostic DRAM memory management techniques will lead to suboptimal designs for STT-MRAM. Therefore, we propose restore-aware policy selection (RAPS), a dynamic and hybrid row buffer management scheme that factors in the inevitable data restores in STT-MRAM-based main memory. RAPS monitors the row buffer hit rate at run time, dynamically switching between two static page-closure policies. By factoring in restores, RAPS accurately captures the optimal design points, achieving optimal policy selections at run time. Our experimental results show that RAPS significantly improves system performance and energy efficiency compared to conventional page-closure policies.

Read disturbance issue and design techniques for nanoscale STT-MRAM.

Read disturbance issue for nanoscale STT-MRAM

Readability Challenges in Deeply Scaled STT-MRAM

Mitigating and Tolerating Read Disturbance in STT-MRAM-Based Main Memory Via Device and Architecture Innovations

Failure and reliability analysis of STT-MRAM.

Design Considerations and Strategies for High-Reliable STT-MRAM

Channel Modeling and Reliability Enhancement Design Techniques for STT-MRAM

Quantitative Evaluation of Reliability and Performance for STT-MRAM

Addressing the Thermal Issues of STT-MRAM from Compact Modeling to Design Techniques

Variation-Tolerant and Disturbance-Free Sensing Circuit for Deep Nanometer STT-MRAM

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

Radiation-Induced Soft Error Analysis of STT-MRAM: A Device to Circuit Approach.

Dynamic Reference Sensing Scheme for Deeply Scaled STT-MRAM

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Enhancing the Reliability of STT-RAM Through Circuit and System Level Techniques

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

Reconfigurable Codesign of Stt-Mram under Process Variations in Deeply Scaled Technology

RAM and TCAM Designs by Using STT-MRAM

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology