Abstract:1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fig. 30.2.1(a), sense amplifier design is challenging due to the small difference (only 2x) between the high-resistance state (R AP ) and the low-resistance state (R P ), as well as R AP degradation with increasing temperature. Moreover, R P and R AP resistance distributions shift with process variation, requiring a read reference (V ref ) that tracks process. To improve the sensing margin, several offset-cancellation methods have been reported to reduce sense amplifier mismatch [3]. However, these methods use multiple capacitors and hence incur significant area overheads. To address this issue, we propose an offset-cancelled sense amplifier that uses only a single capacitor to significantly improve the sensing margin by more than 60%. A second design challenge for STT-MRAM stems from the high current needed to flip a cell during a write operation. For non-volatile memory applications with a 10-year retention time requirement, the write current can be as high as several hundred μA. However, as shown in Fig. 30.2.1(b), the required write time varies with the state change required (0→1 or 1→0), process variation, and temperature. As a result, a fixed write time that ensures successful write for all conditions wastes a significant energy for typical or average conditions. We propose an in situ write-self-termination method to reduce write energy in most scenarios. The sense amplifier is reconfigured to continuously monitor the write operation and automatically shuts off the write drivers when the state transition is detected, without an area or timing penalty. In addition, dual dummy columns are added in each array to provide read V ref tracking of row-wise PVT variation. A 1Mb STT-MRAM was fabricated in 28nm technology, and achieves a 2.8ns read-access time at 25°C and 3.6ns at 120°C, respectively. With in-situ self-write-termination the write power is reduced by 47% with a 20ns write-access time at 25°C and by 60% at 120°C.

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

A Low-power High-reliability STT-MRAM Write Scheme with Real-time Voltage Sensing Module

A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.

Design Considerations and Strategies for High-Reliable STT-MRAM

Self-Enabled "Error-Free" Switching Circuit For Spin Transfer Torque Mram And Logic

High-Speed, Low-Power, and Error-Free Asynchronous Write Circuit for Stt-Mram and Logic

Design of the writing circuit with a low supply voltage for the spin-transfer torque random access memory

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

A Self-Timed Voltage-Mode Sensing Scheme With Successive Sensing and Checking for STT-MRAM

Variability Study of Toggle Spin Torques Magnetic Random Access Memory

EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

A High Reliability Sense Amplifier for Computing In-Memory with STT-MRAM

The fabrication of STT-MRAM memory cell with ultra-low switching power

Spin-hall Assisted STT-RAM Design and Discussion

Novel Self-timing Speculative Writing for Unreliable STT-MRAM

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination