Abstract:While spintronic memories, for example, spin transfer torque magnetic random access memory (STT-MRAM), have shown huge potential for building next-generation memory due to their attractive characteristics, the relatively large write latency and deficient read mechanism preclude their further application for emerging concepts, such as in-memory-processing and neuromorphic computing. A toggle spin torque (TST) MRAM combining STT and spin orbit torque (SOT) has recently been proposed to alleviate the write issue. However, the sensing featuring a good balance between the reliability and speed has not been addressed. In this paper, we propose a self-matching complementary-reference (SMCR) sensing scheme, which provides not only a maximum sensing margin (SM) but also a high-speed read operation. Through applying it in the TSTMRAM, advantageous performance in terms of both write and read processes can be realized. To validate the functionality of our proposal, we design and evaluate an 8Kb TST-MRAM array, in which a read delay of 1 ns and a read bit error rate (BER) of 1.02 × 10 -13 are achieved. Moreover, when being operated at 0.8 V supply voltage, it can reduce the read access energy by 7.5% and 20%, compared with conventional voltage sensing and dynamic reference sensing schemes, respectively.

Variability Study of Toggle Spin Torques Magnetic Random Access Memory

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Design Considerations and Strategies for High-Reliable STT-MRAM

A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.

Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

Proposal of Toggle Spin Torques Magnetic RAM for Ultrafast Computing

SpinSim: A Computer Architecture-Level Variation Aware STT-MRAM Performance Evaluation Framework

Failure and reliability analysis of STT-MRAM.

Quantitative Evaluation of Reliability and Performance for STT-MRAM

Interconnects Scaling Challenge for Sub-20Nm Spin Torque Transfer Magnetic Random Access Memory Technology

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Stability and Variability Emphasized STT-MRAM Sensing Circuit with Performance Enhancement

Two-bit Multi-Level Spin Orbit Torque MRAM with the Fully One-Step Write Operation.

Enhancing the Reliability of STT-RAM Through Circuit and System Level Techniques

Self-Enabled "Error-Free" Switching Circuit For Spin Transfer Torque Mram And Logic

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit