Abstract:Author(s): Chen, Jen-Ru | Advisor(s): Krivorotov, Ilya N | Abstract: Spin Hall effect in a heavy metal (HM) generates a pure spin current flowing perpendicular to an applied electric charge current. When injected into a ferromagnet (FM), this pure spin current can act as negative magnetic damping thereby exciting self-oscillations of magnetization. In a simple HM/FM bilayer geometry, the current-driven self-oscillations of magnetization result in a microwave voltage generation due to anisotropic magneto-resistance (AMR) of the FM. Since AMR in thin films of typical FM materials such as Permalloy (Py) is relatively small, the output microwave signal generated by the HM/FM bilayer spin Hall oscillators (SHOs) is typically limited to ~ 0.1 nW. In this thesis, a new type of SHO by replacing FM layer with spin valve multilayers. In this type of devices, the microwave power generation relies on current-in-plane (CIP) giant magneto-resistance (GMR) instead of AMR. Since the magnitude GMR typically exceeds that of AMR, this new type of SHO can generate significantly higher power than the AMR-based SHOs. The maximum microwave power generated by the device exceeds 1 nW, which is over an order of magnitude higher than that in HM/FM bilayer SHO nanowire devices.Spin Transfer Torque Random Access Memory (STT-RAM) is a promising non-volatile memory technology that offers scalable area, fast operation, and low power consumption advantages over traditional SRAM, DRAM, and flash memories. Performance of the STT-RAM sensitively depends on magnetic anisotropy and properties of the magnetic tunnel junctions (MTJs), which is the most essential part in STT-RAM. We present here the results on the effect of ionizing radiation on perpendicular-anisotropy MTJs (PMTJs). These samples were exposed to both gamma radiation and a mix of gamma and thermal neutron, using the TRIGA reactor. The studies were on TMR, the electrical transport measurements taken on the MTJ nanopillars, both before and after the irradiation. Our results match the previous study\cite{Jander2012}, in which no explicit changes on TMR curves of MTJs after the gamma and neutron irradiation. We also investigated the radiation effect on current switching TMR loop of PMTJs that no one reported before. To be confirmed robustness of MTJs statistically, more than 150 devices were investigated in this study.Non-local lateral devices have been extensively employed for studies of spin-dependent transport in a wide range of non-magnetic (NM) metals and semiconductors. In these devices, pure spin currents in non-magnetic channel materials can be generated and their propagation and decay can be electrically detected. We have successfully observed a non-local spin valve signal in a topological insulator (TI) channel material Sb$_2$Te$_3$. The characteristic property of TI, spin-momentum locking (SML), was identified. The spins of the TI Dirac surface state lies in-plane, and is locked at right angles to the electrons' momentum.

Impact of Off-Axis External Magnetic Field Perturbation on the Write Error Slopes of Perpendicular STT-RAM Cell: Micromagnetic Study

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Write asymmetry of spin-orbit torque memory induced by in-plane magnetic fields

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Impact of external magnetic fields on STT-MRAM

Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Strain-mediated spin-orbit torque switching for magnetic memory

Micromagnetic Studies of Domain Structures and Switching Properties in a Magnetoresistive Random Access Memory Cell

Micromagnetic Studies of Lateral TMR Memory Cell Driven by Spin Polarized Current or by Magnetic Field

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Micromagnetic Studies of Read and Write Process in Magnetoresistive Random Access Memory

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device

Spin Torque and Spin-Dependent Transport in Nanoscale Devices

Instability Mechanism for STT-MRAM switching

Switching Current Dispersion in Magnetic Memory Bits Due to Inhomogeneity of Perpendicular Anisotropy

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Revisiting the Analytical Solution of Spin-Orbit Torque Switched Nanoscale Perpendicular Ferromagnet

Spin-Hall-Assisted Magnetic Random Access Memory

Shape Defect Effect in Perpendicular Shape Anisotropy Nanodots