Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Micromagnetic Studies of Domain Structures and Switching Properties in a Magnetoresistive Random Access Memory Cell

Micromagnetic Studies of Read and Write Process in Magnetoresistive Random Access Memory

A Simple Bilayered Magnetoelectric Random Access Memory Cell Based on Electric-Field Controllable Domain Structure

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film.

Micromagnetic Studies of Lateral TMR Memory Cell Driven by Spin Polarized Current or by Magnetic Field

Thermal stability for domain wall mediated magnetization reversal in perpendicular STT MRAM cells with W insertion layers

Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

High-density Magnetoresistive Random Access Memory Operating at Ultralow Voltage at Room Temperature

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La 0.67 Sr 0.33 MnO 3 Thin Film

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Design of a Voltage‐Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

Impact of Off-Axis External Magnetic Field Perturbation on the Write Error Slopes of Perpendicular STT-RAM Cell: Micromagnetic Study

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

Robust Write Operation in Co Slotted Nanoring

Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Current-induced magnetization switching behaviors in perpendicular magnetized L 1 0 -MnAl/ B2 -CoGa bilayer