Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution
Xiang Li,Taisuke Sasaki,Cecile Grezes,Di Wu,Kin Wong,Chong Bi,Phuong-Vu Ong,Farbod Ebrahimi,Guoqiang Yu,Nicholas Kioussis,Weigang Wang,Tadakatsu Ohkubo,Pedram Khalili Amiri,Kang L. Wang
DOI: https://doi.org/10.1021/acs.nanolett.9b03190
IF: 10.8
2019-01-01
Nano Letters
Abstract:Magnetic tunnel junctions (MTJs) capable of electrical read and write operations have emerged as a canonical building block for non-volatile memory and logic. However, the cause of the wide-spread device properties found experimentally in various MTJ stacks, including tunneling magnetoresistance (TMR), perpendicular magnetic anisotropy (PMA), and voltage-controlled magnetic anisotropy (VCMA), remains elusive. Here, using high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy, we found that the MTJ crystallization quality, boron diffusion out of the CoFeB fixed layer, and minimal CoFe oxidation correlate with the TMR. As with the CoFeB free layer, seed layer diffusion into the free layer/MgO interface is negatively correlated with the interfacial PMA, while the metal-oxides concentrations in the free layer correlate with the VCMA. Combined with formation enthalpy and thermal diffusion analysis, we further established a predictive materials design framework to guide the complex design space explorations for high-performance MTJs. Based on this framework, we demonstrate experimentally high PMA and VCMA values of 1.74 mJ/m2 and 115 fJ/V-m with annealing stability above 400 °C.